IP Library Granted Patent US 10,290,456
Granted Patent B2
US 10,290,456 · App. 15/339,699 · Granted May 14, 2019

Methods of forming and using fuses

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Quick Facts
Patent No.
US 10,290,456
App. No.
15/339,699
Granted
May 14, 2019
Kind
B2
Abstract

Some embodiments include a fuse having a tungsten-containing structure directly contacting an electrically conductive structure. The electrically conductive structure may be a titanium-containing structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Some embodiments include a method of forming and using a fuse. The fuse is formed to have a tungsten-containing structure directly contacting an electrically conductive structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Current exceeding the predetermined level is passed through the interface to rupture the interface.

Claims (13)

1. A method of using a fuse, comprising:

providing the fuse to comprise a tungsten-containing structure directly contacting a titanium-containing structure; the tungsten containing structure having a circular uppermost surface with a total area and contacting the titanium-containing structure only at an interface between the uppermost surface of the tungsten-containing and the titanium-containing structure, the interface being circular and having a total area of less than or equal to 1500 nm 2 , the interface having an area that is less than the total area of the uppermost surface, the interface being configured to rupture when current through said interface exceeds a predetermined level;

passing current exceeding the predetermined level through the interface to rupture the interface;

wherein the fuse is formed adjacent a PCRAM array;

wherein at least one of the tungsten-containing structure and the titanium-containing structure is identical in composition with a structure of the PCRAM array; and

wherein the titanium-containing structure comprises titanium nitride doped with one or more of aluminum, silicon and carbon.

2. The method of claim 1 wherein at least one of the tungsten-containing structure and the titanium-containing structure is formed simultaneously with a structure of the PCRAM array.

3. The method of claim 2 wherein the tungsten-containing structure is formed simultaneously with a tungsten-containing structure of the PCRAM array.

4. The method of claim 2 wherein the titanium-containing structure is formed simultaneously with titanium-containing heater structures of PCRAM cells of the PCRAM array.

5. The method of claim 1 further comprising, after rupturing the interface, resetting the fuse by flowing current across the ruptured interface.

6. The method of claim 5 wherein the resetting comprises flowing current of an opposite polarity as compared to current utilized to rupture the interface.

7. The method of claim 1 wherein the rupture utilizes electron wind.

8. The method of claim 1 wherein the tungsten-containing structure consists of tungsten.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050695/0825 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 3 TO PATENT SECURITY AGREEMENT Recorded Feb 10, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041675/0105 →