Semiconductor package and fabrication method thereof
View Patent ↗A semiconductor package includes an interconnect component surrounded by a molding compound. The interconnect component comprises a first RDL structure. A second RDL structure is disposed on the interconnect component. A plurality of first connecting elements is disposed on the second RDL structure. A polish stop layer covers a surface of the interconnect component. A plurality of second connecting elements is disposed on and in the polish stop layer. At least one semiconductor die is mounted on the second connecting elements.
1. A semiconductor package, comprising:
an interconnect component surrounded by a molding compound, wherein the interconnect component comprises a first redistribution layer (RDL) structure;
a second RDL structure disposed on the interconnect component and on the molding compound, wherein the second RDL structure is electrically connected to the first RDL structure;
a plurality of first connecting elements disposed on the second RDL structure on a first side of the second RDL structure opposite a second side of the second RDL structure that is disposed on the interconnect component and on the molding compound;
a polish stop layer covering a surface of the interconnect component on a first side of the interconnect component opposite a second side of the interconnect component on which the second RDL structure is disposed;
a plurality of second connecting elements disposed on and in a dielectric layer of the first RDL structure, the plurality of second connecting elements disposed on the first side of the interconnect component; and
at least one semiconductor die mounted on at least one of the plurality of second connecting elements.
2. The semiconductor package of claim 1 , wherein the polish stop layer comprises silicon nitride, silicon oxide, or a combination thereof.
3. The semiconductor package of claim 1 , wherein the first connecting elements are BGA balls.
4. The semiconductor package of claim 3 , wherein the first connecting elements have a ball pitch that matches a ball pad pitch on a motherboard or a printed circuit board (PCB).
5. The semiconductor package of claim 4 , wherein the second connecting elements are micro bumps.
6. The semiconductor package of claim 5 , wherein the second connecting elements have a fine pitch that matches input/output (I/O) pad pitch on an active surface of the at least one semiconductor die.
7. The semiconductor package of claim 1 , wherein the polish stop layer is flush with a top surface of the molding compound.
8. The semiconductor package of claim 1 , wherein the at least one semiconductor die is electrically connected to the first RDL structure by the at least one of the plurality of second connecting elements.
9. The semiconductor package of claim 1 , wherein the at least one semiconductor die is mounted on the at least one of the plurality of second connecting elements such that an active surface of the at least one semiconductor die faces the at least one of the plurality of second connecting elements.
10. The semiconductor package of claim 1 , wherein the first RDL structure comprises the dielectric layer and a rewiring layer.
11. The semiconductor package of claim 1 , wherein the second RDL structure comprises a dielectric layer and a rewiring layer.
12. The semiconductor package of claim 1 , wherein the second RDL structure is electrically connected to the first RDL structure and wherein a rewiring layer of the second RDL is electrically connected to a rewiring layer of the first RDL structure.
13. The semiconductor package of claim 10 , wherein the first RDL structure further comprises bump pads electrically connected to the rewiring layer, and wherein the plurality of second connecting elements is formed over the bump pads.
14. The semiconductor package of claim 1 , wherein the polish stop layer comprises a dielectric layer or a passivation layer.
15. The semiconductor package of claim 1 , wherein the second RDL structure further comprises pads, and wherein the plurality of first connecting elements is formed on respective pads of the second RDL structure.
16. The semiconductor package of claim 1 , wherein the polished stop layer comprises a plurality of openings, and wherein the plurality of second connecting elements is formed in the plurality of openings of the polished stop layer.
17. The semiconductor package of claim 1 , further comprising a solder mask formed on the first side of the second RDL structure, and wherein the plurality of first connecting elements is formed through openings in the solder mask.
18. A semiconductor package, comprising:
a first redistribution layer (RDL) structure surrounded by a molding compound;
a second RDL structure disposed on and electrically connected to the first RDL structure;
a plurality of first connecting elements disposed on the second RDL structure on a first side of the second RDL structure opposite a second side of the second RDL structure that is disposed on the first RDL structure;
a polish stop layer disposed on the first RDL structure on a first side of the first RDL structure opposite a second side of the first RDL structure on which the second RDL structure is disposed;
a plurality of second connecting elements formed in the first RDL structure through the first side of the first RDL structure; and
a semiconductor die mounted on at least one second connecting element.
19. The semiconductor package of claim 18 , wherein the plurality of first connecting elements are BGA balls and have a ball pitch that matches a ball pad pitch on a motherboard or a printed circuit board (PCB).
20. The semiconductor package of claim 18 , wherein the plurality of second connecting elements are micro bumps and have a fine pitch that matches input/output (I/O) pad pitch on an active surface of the semiconductor die.