Capacitor, storage node of the capacitor, and method of forming the same
View Patent ↗A semiconductor structure includes a substrate having thereon at least one conductive region; a plurality of cylinder-shaped electrodes disposed on the substrate, wherein each of the cylinder-shaped electrodes has a horizontal portion that is in direct contact with the at least one conductive region and a vertical sidewall portion connecting the horizontal portion; an upper support structure comprising a first lattice structure that is situated in a first horizontal level that is lower than a tip portion of each of the cylinder-shaped electrodes; and a lower support structure comprising a second lattice structure that interlocks middle portions of the cylinder-shaped electrodes.
1. A semiconductor structure, comprising:
a substrate having thereon at least one conductive region;
a plurality of cylinder-shaped electrodes disposed on the substrate, wherein each of the cylinder-shaped electrodes has a horizontal portion that is in direct contact with the at least one conductive region and a vertical sidewall portion connecting the horizontal portion;
an upper support structure comprising a first lattice structure that is situated in a first horizontal level that is lower than a tip portion of each of the cylinder-shaped electrodes, wherein the upper support structure further comprises an annular spacer around the tip portion of each of the cylinder-shaped electrodes; and
a lower support structure comprising a second lattice structure that interlocks middle portions of the cylinder-shaped electrodes.
2. The semiconductor structure according to claim 1 wherein the annular spacer comprises silicon oxide or polysilicon.
3. The semiconductor structure according to claim 1 wherein the annular spacer, the upper support structure, and the lower support structure have substantially the same pattern.
4. The semiconductor structure according to claim 1 wherein the upper support structure and the lower support structure have substantially the same pattern.
5. The semiconductor structure according to claim 1 wherein the upper support structure and the lower support structure prevent the cylinder-shaped electrodes from toppling.
6. The semiconductor structure according to claim 1 further comprising a stop layer covering a top surface of the substrate.
7. The semiconductor structure according to claim 6 wherein the stop layer comprises silicon nitride.
8. The semiconductor structure according to claim 1 wherein the first lattice structure and the second lattice structure comprise silicon nitride.
9. The semiconductor structure according to claim 1 wherein a plurality of discontinuous gaps are dispersed around each of the cylinder-shaped electrodes.
10. The semiconductor structure according to claim 1 further comprising a capacitor dielectric layer conformally covers the cylinder-shaped electrodes, the upper support structure, and the lower support structure.
11. The semiconductor structure according to claim 10 further comprising a capacitor electrode on the capacitor dielectric layer.