Method of manufacturing isolation structure

1. A method of manufacturing an isolation structure comprising:

forming a laminate structure on a substrate;

forming a plurality of trenches in the laminate structure;

performing a pretreatment process to form a hydrophilic thin film having oxygen ions on the inner wall of the trenches, wherein the pretreatment process is conducted at about 470° C. to 490° C. for approximately 30 to 50 seconds;

filling spin-on-dielectric (SOD) materials into the trenches, wherein the hydrophilic thin film having oxygen ions is formed to change the surface tension of the inner wall of the trenches to increases the fluidity of the SOD materials; and

performing a curing process that converts the hydrophilic thin film having oxygen ions and the SOD materials into a silicon oxide layer, wherein the hydrophilic thin film provides oxygen ions in the conversion.

2. The method of manufacturing an isolation structure according to claim 1 , wherein the curing process further comprises curing, wet oxidation, dry oxidation and high temperature annealing for converting the Si—N bond to Si—O bond in the SOD materials.

3. The method of manufacturing an isolation structure according to claim 1 , wherein the SOD material is a polysilazane solvent or a perhydro-silazane solvent.

4. The method of manufacturing an isolation structure according to claim 1 , wherein the pretreatment process produces oxygen ions by high radio frequency (RF) power, ultra violet, heating or plasma and the oxygen ions attach to the inner wall of the trenches to form the hydrophilic thin film.

5. The method of manufacturing an isolation structure according to claim 1 , wherein the pre-processing is conducted in vacuum, subatmosphere, atmosphere, or pressured condition.

6. The method of manufacturing an isolation structure according to claim 1 , wherein the laminate structure includes an oxide layer, a silicon rich layer formed on the oxide layer, a tungsten layer formed on the silicon rich layer and a silicon nitride layer formed on the tungsten layer.

7. The method of manufacturing an isolation structure according to claim 1 , wherein forming the plurality of trenches in the laminate structure further comprises:

forming a silicon oxide pad layer on the laminate structure and a silicon nitride hard cover of the silicon oxide pad layer thereon;

patterning the hard cover and the pad layer; and

etching the laminate structure by using the patterned hard cover and pad layer as a mask to form the trenches.

8. The method of manufacturing an isolation structure according to claim 1 , wherein forming the plurality of trenches in the laminate structure further comprises:

forming a patterned photoresistance layer on the laminate structure; and

etching the laminate structure by using the patterned photoresistance layer as a mask to form the trenches.