IP Library Granted Patent US 10,048,887
Granted Patent B2
US 10,048,887 · App. 15/336,071 · Granted Aug 14, 2018

Apparatuses and methods for single level cell caching

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Quick Facts
Patent No.
US 10,048,887
App. No.
15/336,071
Granted
Aug 14, 2018
Kind
B2
Abstract

Methods and apparatuses for single level cell caching are described. According to one example, a method includes receiving, at a memory device, a first set of data to be stored in a lower page of multilevel memory cells, storing the first set of data in a page of single level memory cells, storing the first set of data in the lower page of the multilevel memory cells, receiving, at the memory device, a second set of data to be stored in an upper page of the multilevel memory cells, and storing the second set of data directly in the upper page of the multilevel memory cells.

Claims (10)

1. An apparatus comprising:

a memory array comprising a block of single level memory cells and a block of multilevel memory cells; and

a control circuit configured to receive a first set of data to be written into the memory array, store a copy of the first set of data in a page of the block of single level memory cells, and subsequently store the first set of data in a lower page of the block of multilevel memory cells, the control circuit further configured to receive a second set of data and store the second set of data directly in an upper page of the multilevel memory cells without storing a copy of the second set of data in the page of the block of single level memory cells.

2. The apparatus of claim 1 , wherein the control circuit is further configured to update one or more page tables responsive to storing the first set of data or the second set of data.

3. The apparatus of claim 1 , wherein the block of multilevel memory cells comprises memory cells configured to store at least three bits.

4. The apparatus of claim 1 , wherein the control circuit is further configured to erase the page of the block of single level memory cells responsive to storing the second set of data in the upper page of the block of multilevel memory cells.

5. The apparatus of claim 1 , wherein the control circuit is further configured to provide a confirmation message responsive to storing the first set of data in the page of the single level memory cells.

6. The apparatus of claim 1 , wherein the control circuit is further configured to:

detect a power loss event while storing the second set of data in the upper page of the block of multilevel memory cells; and

copy the first set of data from the page of the block of single level memory cells to the lower page of the block multilevel memory cells responsive to detecting the power loss event.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050695/0825 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 3 TO PATENT SECURITY AGREEMENT Recorded Feb 10, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041675/0105 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2016
From: DOYLE, DANIEL
To: MICRON TECHNOLOGY, INC.
Reel/Frame 040152/0497 →