IP Library Granted Patent US 9,935,085
Granted Patent B2
US 9,935,085 · App. 15/361,659 · Granted Apr 3, 2018

Semiconductor substrates with unitary vias and via terminals, and associated systems and methods

Inventors: Kyle K. Kirby (Eagle, ID); Kunal R. Parekh (Boise, ID)
Assignee: Micron Technology, Inc.
H01L25/0657H01L21/76898H01L23/481H01L23/49827H01L24/11H01L24/16H01L2224/05568H01L2224/05573H01L2224/13009H01L2224/13025H01L2224/13099H01L2225/06513H01L2225/06544H01L2225/06548H01L2924/00014H01L2924/014H01L2924/01006H01L2924/01013H01L2924/01023H01L2924/01029H01L2924/01033H01L2924/01047H01L2924/01049H01L2924/01073H01L2924/01074H01L2924/01075H01L2924/01079H01L2924/12042H01L2924/14
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Quick Facts
Patent No.
US 9,935,085
App. No.
15/361,659
Granted
Apr 3, 2018
Kind
B2
Abstract

Semiconductor substrates with unitary vias and via terminals, and associated systems and methods are disclosed. A representative system in accordance with a particular embodiment includes a semiconductor substrate having an opening that includes a generally cylindrical portion with a generally smooth, uniform surface. The opening also includes a terminal portion extending transversely to the cylindrical portion and intersecting. A single, uniform, homogeneous volume of conductive material is disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion. The conductive terminal has a cross-section with generally flat walls aligned with crystal planes of the semiconductor substrate material. The conductive terminal projects away from the semiconductor substrate.

Claims (23)

1. A semiconductor assembly, comprising:

a semiconductor substrate including a substrate material having a first major surface, a second major surface, and an opening extending from the first major surface to the second major surface, the opening including a generally cylindrical portion extending generally normal to the first major surface and a terminal portion extending transverse to the cylindrical portion and intersecting the second major surface, the terminal portion having a width generally parallel to the plane of the first major surface that is greater than a corresponding width of the cylindrical portion; and

a homogeneous volume of conductive material disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion, wherein

the conductive terminal has a cross-section with generally flat walls, the cross-section being taken in a plane normal to the second major surface,

the conductive terminal projects outwardly away from the second major surface and the outwardly projecting portion of conductive terminal includes a first portion facing the semiconductor substrate and a second portion facing away from the semiconductor substrate, an outer boundary of the first portion tapering laterally outwardly in a direction away from the second major surface and an outer boundary of the second portion tapering laterally inwardly in a direction away from the second major surface, and

the conductive terminal has a first cross-sectional width in a first plane that generally corresponds to the second major surface of the semiconductor substrate, and a second cross-sectional width in a second plane that is generally parallel to the first plane and positioned beyond an outermost surface of the semiconductor substrate, the second cross-sectional width being greater than the first cross-sectional width.

2. The semiconductor assembly of claim 1 wherein the conductive material has a concave, cup-shaped void within the terminal portion.

3. The semiconductor assembly of claim 1 , further comprising a seed layer on an outer boundary of the conductive material at the first and second portions of the conductive terminal.

4. The semiconductor assembly of claim 2 wherein the conductive material is a first conductive material, and wherein the semiconductor assembly further comprises a second conductive material filling the concave, cup-shaped void in the first conductive material.

5. A semiconductor assembly, comprising:

a semiconductor substrate including a substrate material having a first major surface, a second major surface, and an opening extending from the first major surface to the second major surface, the opening including a generally cylindrical portion extending generally normal to the first major surface and a terminal portion extending transverse to the cylindrical portion and intersecting the second major surface, the terminal portion having a width generally parallel to the plane of the first major surface that is greater than a corresponding width of the cylindrical portion; and

a homogeneous volume of conductive material disposed in both the cylindrical portion and the terminal portion of the opening, the conductive material forming a conductive path in the cylindrical portion and at least a portion of a conductive terminal in the terminal portion,

wherein the conductive terminal projects outwardly away from the second major surface and includes an exposed outwardly facing surface configured for connection to an adjacent structure;

wherein the conductive terminal has a cross-section with generally flat walls and a void confined within the terminal portion, and

wherein the cross-section is taken in a plane normal to the second major surface.

6. The semiconductor assembly of claim 5 wherein the conductive material is a solderless material.

7. The semiconductor assembly of claim 6 wherein the assembly further comprises a solder ball attached to the conductive material at the terminal portion, the solder ball being at least partially aligned with the void of the conductive terminal.

8. The semiconductor assembly of claim 5 wherein the flat walls are aligned with crystal planes of the semiconductor substrate material.

9. The semiconductor assembly of claim 5 wherein the conductive material is a first conductive material, and wherein the semiconductor assembly further comprises a second conductive material filling the void in the first conductive material.

10. The semiconductor assembly of claim 5 wherein:

the exposed outwardly facing surface of the conductive terminal includes a first portion and a second portion spaced apart from the semiconductor substrate by the first portion;

an outer boundary of the first portion tapers laterally outwardly in a direction away from the second major surface; and

an outer boundary of the second portion tapers laterally inwardly in a direction away from the second major surface.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050695/0825 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 3 TO PATENT SECURITY AGREEMENT Recorded Feb 10, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041675/0105 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2016
From: KIRBY, KYLE K.; PAREKH, KUNAL R.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 040450/0391 →
Continuity (4)
Division 14154329 · Jan 14, 2014
Continuation 13241059 · Sep 22, 2011
Division 12253121 · Oct 16, 2008
Related Publication 20170077067A1 · Mar 16, 2017