Method for manufacturing capacitor lower electrodes of semiconductor memory

1. A method for manufacturing capacitor lower electrodes of a semiconductor memory, particularly a method for manufacturing a stack dynamic random access memory, comprising the steps of:

forming a stacked structure over a semiconductor substrate with a plurality of conductive plugs;

partially etching a hard mask layer, a first silicon nitride layer and a dielectric layer in the stacked structure to form a plurality of concave portions;

depositing a second silicon nitride layer onto the hard mask layer and into the concave portions;

partially etching the second silicon nitride layer, the hard mask layer, the dielectric layer and an insulating nitride layer to form a plurality of trenches to expose the conductive plugs;

in each of the plurality of trenches, forming a conductive metal material on the exposed conductive plug and a capacitor lower electrode electrically connecting the conductive metal material, and partially etching the first silicon nitride layer, the second silicon nitride layer, the dielectric layer and the capacitor lower electrodes to form an etching area; and

etching and removing the dielectric layer from the etching area so that a periphery portion of each of the capacitor lower electrodes is surrounded by and attached to the second silicon nitride layer for enhancing supporting strength of the capacitor lower electrodes, reducing the difficulty in disposing of capacitor dielectric layers and capacitor upper electrodes outside the capacitor lower electrodes, and preventing the capacitor lower electrodes from collapsing or producing deformation.

2. The method as claimed in claim 1 , wherein the step of forming the stacked structure is stacking an insulating nitride layer, at least one dielectric layer, a first silicon nitride layer and a hard mask layer in turn, the insulating nitride layer located over the semiconductor substrate, the dielectric layer interposed between the insulating nitride layer and the first silicon nitride layer, and the hard mask layer located on the first silicon nitride layer.

3. The method as claimed in claim 1 , wherein in the step of forming the concave portions, the depth of the concave portions is controlled basing on an etching duration.

4. The method as claimed in claim 1 , wherein in the step of forming the concave portions, positions of the concave portions are determined basing on a yellow light technology and then the layers are etched to form the concave portions basing on a plasma dry etching technology.

5. The method as claimed in claim 1 , wherein in the step of forming the trenches, the second silicon nitride layer and the hard mask layer are firstly partially etched, and then the second silicon nitride layer, the dielectric layer and the insulating nitride layer under the concave portions are etched.

6. The method as claimed in claim 1 , further comprising the step of grinding and removing the hard mask layer and certain portions of the second silicon nitride layer by utilizing a chemical mechanical grinding method before the etching area is formed.

7. The method as claimed in claim 1 , wherein the hard mask layer is composed of silicon dioxide or silicon nitride, the dielectric layer is composed of silicate glass, and the capacitor lower electrodes are composed of titanium or titanium nitride.

8. A method for manufacturing capacitor lower electrodes of a semiconductor memory, comprising the steps of:

forming a stacked structure comprising a dielectric layer, a first silicon nitride layer, and a hard mask layer, wherein the first silicon nitride layer is interposed between the hard mask layer and the dielectric layer, and the hard mask layer is located on the first silicon nitride layer;

partially etching the hard mask layer, the first silicon nitride layer and the dielectric layer to form a plurality of concave portions;

depositing a second silicon nitride layer onto the hard mask layer and into the concave portions;

partially etching the second silicon nitride layer, the hard mask layer, and the dielectric layer to form a plurality of trenches;

in each of the plurality of trenches, forming a capacitor lower electrode, and partially etching the first silicon nitride layer, the second silicon nitride layer, the dielectric layer and the capacitor lower electrodes to form an etching area; and

etching and removing the dielectric layer from the etching area so that a periphery portion of each of the capacitor lower electrodes is surrounded by and attached to the second silicon nitride layer for enhancing supporting strength of the capacitor lower electrodes, reducing the difficulty in disposing of capacitor dielectric layers and top capacitor electrodes outside the capacitor lower electrodes, and preventing the capacitor lower electrodes from collapsing or producing deformation.

9. The method as claimed in claim 8 , wherein in the step of forming the concave portions, the depth of the concave portions is controlled basing on an etching duration.

10. The method as claimed in claim 8 , wherein in the step of forming the concave portions, positions of the concave portions are determined basing on a yellow light technology and then the layers are etched to form the concave portions basing on a plasma dry etching technology.

11. The method as claimed in claim 8 , wherein in the step of forming the trenches, the second silicon nitride layer and the hard mask layer are firstly partially etched, and then the second silicon nitride layer and the dielectric layer under the concave portions are etched.

12. The method as claimed in claim 8 , further comprising the step of grinding and removing the hard mask layer and the partial second silicon nitride layer by utilizing a chemical mechanical grinding method before the etching area is formed.

13. The method as claimed in claim 8 , wherein the hard mask layer is composed of silicon dioxide or silicon nitride, the dielectric layer is composed of silicate glass, and the capacitor lower electrodes are composed of titanium or titanium nitride.