Solid state optoelectronic device with plated support substrate
A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.
1. A wafer having a plurality of individual solid state lighting devices, comprising:
a light emitting structure having a first side and a second side opposite the first side, the light emitting structure comprising a first semiconductor material on the first side, a second semiconductor material on the second side, and an active region between the first and second semiconductor materials;
an embedded contact at the second side;
a plated substrate formed on the embedded contact, wherein the plated substrate has a thickness sufficient to inhibit bowing of the light emitting structure; and
a plurality of exterior contacts formed on the first side of the light emitting structure, wherein the wafer is at least approximately 150 millimeters in diameter.
2. The wafer of claim 1 wherein the wafer is between approximately 150-300 millimeters in diameter.
3. The wafer of claim 1 wherein the wafer has trenches in the light emitting structure and the plated substrate comprises a plurality of projections protruding from the plated substrate into the trenches.
4. The wafer of claim 1 , further comprising at least one of a barrier material and a reflective material between the plated substrate and the embedded contact.
5. The wafer of claim 1 wherein the plated substrate has a thickness of about 50-300 μm.
6. The wafer of claim 1 wherein the plated substrate has a thickness of about 100-150 μm.
7. The wafer of claim 1 wherein the plated substrate has a thickness greater than a thickness of the light emitting structure.
8. A solid state lighting device, comprising:
a light emitting structure having a first side and a second side opposite the first side, the light emitting structure comprising a first semiconductor material on the first side, a second semiconductor material on the second side, and an active region between the first and second semiconductor materials;
an embedded contact layer at the second side; and
a thick metal backside support member formed on the embedded contact layer directly connected to an external device, wherein the thick metal backside support member has a thickness sufficient to inhibit bowing of the light emitting structure.
9. The solid state lighting device of claim 8 wherein the embedded contact layer is silver (Ag).
10. The solid state lighting device of claim 8 , further comprising a plurality of exterior contacts formed on the first side of the light emitting structure.
11. The solid state lighting device of claim 8 wherein:
the first semiconductor material comprises a p-type gallium nitride (“p-GaN”) material;
the second semiconductor material comprises a n-type gallium nitride (“n-GaN”) material; and
the active region comprises an indium gallium nitride (“InGaN”) material.
12. The solid state lighting device of claim 8 wherein the thick metal backside support member has a thickness of about 50-300 μm.
13. The solid state lighting device of claim 8 wherein the thick metal backside support member has a thickness of about 100-150 μm.