Semiconductor structure and manufacturing method thereof
View Patent ↗A semiconductor structure includes a substrate, a first through hole disposed in the substrate and filled with conductive material, and a second through hole disposed in the substrate and filled with isolation material, which a Young's modulus of the isolation material is smaller than a Young's modulus of the conductive material to balance stress from the conductive material.
1. A semiconductor structure, comprising:
a substrate;
a first through hole disposed in the substrate and filled with conductive material; and
a second through hole disposed in the substrate and filled with isolation material, and a Young's modulus of the isolation material being smaller than a Young's modulus of the conductive material to balance stress from the conductive material.
2. The semiconductor structure of claim 1 , wherein the conductive material comprises copper, tungsten, polysilicon, or combination thereof.
3. The semiconductor structure of claim 1 , wherein the Young's modulus of the conductive material is over than 110 GPa.
4. The semiconductor structure of claim 1 , wherein the Young's modulus of the isolation material is smaller than 100 GPa.
5. The semiconductor structure of claim 4 , wherein the Young's modulus of the isolation material is in a range from about 5 GPa to about 100 GPa.
6. The semiconductor structure of claim 5 , wherein the Young's modulus of the isolation material is in a range from about 5 GPa to about 50 GPa.
7. The semiconductor structure of claim 1 , wherein the isolation material comprises spin-on glass, spin-on dielectric, polyimide, silicon dioxide, or combination thereof.
8. The semiconductor structure of claim 1 , wherein the second through hole is filled with isolation materials having different Young's modulus to form a multi-layer structure in the second through hole.
9. The semiconductor structure of claim 1 , wherein the first through hole and the second through comprise the same depth.
10. The semiconductor structure of claim 1 , wherein the first through hole and the second through comprise different depths.
11. The semiconductor structure of claim 1 , wherein the substrate comprises a first surface and a second surface opposite to the first surface.
12. The semiconductor structure of claim 11 , wherein the first through hole and the second through hole extend from the first surface to the second surface.
13. The semiconductor structure of claim 11 , wherein the first through hole and the second through hole extend from the second surface to the first surface.
14. The semiconductor structure of claim 1 , wherein the second through hole surrounds the first through hole.