Solid state lighting devices with accessible electrodes and methods of manufacturing

1. A method of manufacturing a light emitting die having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the first semiconductor material having a first surface, the second semiconductor material having a second surface facing away from the first surface, the method comprising:

forming a first electrode in contact with the first surface of the first semiconductor material;

forming a second electrode in contact with the second surface of the second semiconductor material, wherein the first semiconductor material, the active region, and the second semiconductor material together have a stack thickness equal to a distance between the first and second surfaces, and wherein the second electrode is spaced apart from the first electrode by at least the stack thickness; and

exposing a portion of the second electrode through the first semiconductor material, the active region, and the second semiconductor material.

2. The method of claim 1 wherein exposing the portion of the second electrode includes enabling both the first electrode and the second electrode to be accessible from the same side of the light emitting die.

3. The method of claim 1 wherein:

the second electrode includes a first portion and a second portion extending from the first portion;

the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material; and

the second portion of the second electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material.

4. The method of claim 1 wherein:

the second electrode includes a first portion and a second portion extending from the first portion;

the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material; and

the second portion of the second electrode laterally extends beyond the second semiconductor material, the active region, and the first semiconductor material.

5. The method of claim 1 wherein:

the second electrode includes a first portion and a second portion extending from the first portion;

the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material;

the second portion of the second electrode includes a plurality of individual sections spaced apart from one another; and

the individual sections of the second portion laterally extend beyond the first semiconductor material, the active region, and the second semiconductor material.

6. A method of manufacturing a light emitting die having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material and an active region between the first and second semiconductor materials, the method comprising:

forming an opening extending completely through the second semiconductor material and the active region and only a portion of the first semiconductor material;

forming a passivation material having a first passivation portion lining a sidewall of the opening and a second passivation portion extending laterally relative to the first passivation portion external to the opening;

forming a first electrode in the opening and adjacent the first passivation portion; and

forming a second electrode external to the opening between the second semiconductor material and the second passivation portion of the passivation material, a portion of the second electrode being exposed through the first semiconductor material, the active region, and the second semiconductor material, wherein the second electrode is spaced apart from the first electrode by at least the stack thickness.

7. The method of claim 6 , further comprising:

forming a conductive substrate proximate the second semiconductor material; and

directly contact the first electrode with the conductive substrate.

8. The method of claim 6 , further comprising:

forming a conductive substrate proximate the second semiconductor material;

directly contact the first electrode with the conductive substrate; and

electrically isolating the second electrode from the conductive substrate by the second passivation portion.

9. The method of claim 6 , further comprising forming a conductive substrate proximate the second semiconductor material, wherein;

the first electrode has a first end proximate the first semiconductor material and a second end proximate the second semiconductor material;

the second passivation portion has a first surface and a second surface opposite the first surface, the first surface being in contact with the second electrode; and

the second surface of the second passivation portion is generally co-planar with the second end of the first electrode.

10. The method of claim 6 , further comprising forming a conductive substrate proximate the second semiconductor material, wherein:

the first electrode has a first end proximate the first semiconductor material and a second end proximate the second semiconductor material;

the second passivation portion of the passivation material has a first surface and a second surface opposite the first surface, the first surface being in contact with the second electrode;

the second surface of the second passivation portion is generally co-planar with the second end of the first electrode; and

both the second surface of the second passivation portion and the second end of the first electrode are in contact with the conductive substrate.

11. The method of claim 6 wherein:

the first electrode has a first conductive portion in the opening and a second conductive portion external to the opening; and

the second conductive portion extends laterally beyond the second electrode.

12. The method of claim 6 further comprising electrically isolating the first conductive portion from the active region and the second semiconductor material by the first passivation portion of the passivation material, and wherein:

the first electrode has a first conductive portion in the opening and a second conductive portion external to the opening; and

the second conductive portion extends laterally beyond the second electrode.

13. The light emitting device of claim 6 further comprising electrically isolating the first conductive portion from the active region and the second semiconductor material by the first passivation portion of the passivation material, wherein:

the first electrode has a first conductive portion in the opening and a second conductive portion external to the opening;

the second conductive portion is in contact with the second passivation portion; and

the second conductive portion extends laterally beyond the second passivation portion and the second electrode.

14. The method of claim 6 , further comprising:

forming a substrate of the light emitting device;

forming an insulating material on the substrate;

electrically isolating the first conductive portion from the active region and the second semiconductor material by the first passivation portion of the passivation material; and

positing the second conductive portion between the insulating material and the second passivation portion,

wherein the first electrode has a first conductive portion in the opening and a second conductive portion external to the opening; and

wherein the second conductive portion extends laterally beyond the second passivation portion and the second electrode.

15. A method of manufacturing a light emitting die having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the method comprises:

forming a first electrode extending through the second semiconductor material, the active region and a portion of the first semiconductor material;

electrically coupling the first electrode to the first semiconductor material;

electrically isolating the first electrode from the second semiconductor material and the active region; and

forming a second electrode in contact with the second semiconductor material and surrounding at least a portion of the first electrode;

electrically isolating the second electrode from the first electrode; and

exposing a portion of the second electrode through the first semiconductor material, the active region, and the second semiconductor material,

wherein the second electrode is spaced apart from the first electrode by at least the stack thickness.

16. The method of claim 15 wherein:

the second electrode includes a first portion and a second portion extending from the first portion;

the first portion of the second electrode is covered by the first semiconductor material, the active region, and the second semiconductor material; and

the second portion of the second electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material.

17. The method of claim 16 further comprising forming an opening extending through the first portion of the second electrode, wherein:

the first electrode has a first conductive portion in the opening and a second conductive portion external to the opening; and

the second conductive portion extends laterally beyond the second portion of the second electrode.

18. The method of claim 16 wherein the second conductive portion and the second portion of the second electrode are accessible from the same side of the light emitting die.

19. The method of claim 15 , further comprising:

forming an opening extending through a first portion of the second electrode, the second electrode including a second portion extending from the first portion, wherein the first electrode has a first conductive portion in the opening and a second conductive portion external to the opening, and wherein the second conductive portion extends laterally beyond the second portion of the second electrode;

covering the first portion of the second electrode by the first semiconductor material, the active region, and the second semiconductor material;

exposing the second portion of the second electrode through the first semiconductor material, the active region, and the second semiconductor material; and

forming a passivation material between the second conductive portion of the conductive material and the second electrode.