Semiconductor device
A semiconductor device includes a substrate, and interposer layers. The substrate has a first region, and a second region adjacent the first region. The interposer layers are sequentially stacked on the substrate. Each of the interposer layers has an active region and an open region, which respectively correspond to the first region and the second region of the substrate. Each of the interposer layers includes a device layout pattern, and a stress release structure. The device layout pattern is formed within the active region. The stress release structure is formed within the open region, and includes openings.
1. A semiconductor device comprising:
a substrate having a first region and a second region adjacent the first region; and
interposer layers sequentially stacked on the substrate, wherein each of the interposer layers has an active region and an open region, respectively corresponding to the first region and the second region, each of the interposer layers comprising a device layout pattern within the active region; and
a stress release structure within the open region, and the stress release structure comprising multiple groups of openings, each group of openings comprising multiple openings oriented in a column relative to one another and sharing a longitudinal axis,
wherein each opening of a respective group of openings extends through a single interposer layer of the interposer layers, and
wherein material of at least one interposer layer of the interposer layers is disposed between adjacent openings within a respective group of openings.
2. The semiconductor device of claim 1 , further comprising a stiffener film on a surface of one of the interposer layers facing away from the substrate.
3. The semiconductor device of claim 2 , wherein the stiffener film comprises a material selected from the group consisting of silicon nitride, tantalum, titanium, tantalum nitride, titanium nitride, and combinations thereof.
4. The semiconductor device of claim 1 , wherein the openings are vacant.
5. The semiconductor device of claim 1 , wherein the openings are rectangular or elliptical.
6. The semiconductor device of claim 1 , wherein openings of different groups of openings are oriented in rows relative to one another.
7. The semiconductor device of claim 1 , further comprising a conductive material inside the openings in one of the interposer layers.
8. The semiconductor device of claim 1 , wherein the first region is enclosed by the second region.
9. The semiconductor device of claim 1 , wherein each group of openings includes at least two openings separate and discrete from each other and separated by at least one interposer layer.
10. A semiconductor device comprising:
a substrate; and
interposer layers sequentially stacked on the substrate, wherein the interposer layers form an active region and an open region, the interposer layers comprising:
a device layout pattern formed within the active region of the interposer layers; and
a stress release structure formed within the open region of the interposer layers and comprising groups of multiple openings, each group of openings comprising multiple openings oriented in a column relative to one another and sharing a longitudinal axis,
wherein each opening of a respective group of openings extends through a single interposer layer of the interposer layers, and
wherein material of at least one interposer layer of the interposer layers is disposed between adjacent openings within a respective group of openings; and
stiffener films, each stiffener film of the stiffener films being disposed on a respective interposer layer of the interposer layers and on a surface of the respective interposer layer opposite the substrate.
11. The semiconductor device of claim 10 , wherein the stiffener films comprise a material selected from the group consisting of silicon nitride, tantalum, titanium, tantalum nitride, titanium nitride, and combinations thereof.
12. The semiconductor device of claim 10 , wherein the multiple openings are vacant.
13. The semiconductor device of claim 10 , wherein the multiple openings are rectangular or elliptical.
14. The semiconductor device of claim 10 , wherein openings of different groups of openings are oriented in rows relative to one another.
15. The semiconductor device of claim 10 , further comprising a conductive material disposed within the multiple openings in one of the interposer layers.
16. The semiconductor device of claim 10 , wherein the active region is enclosed by the open region.
17. A semiconductor device comprising:
a substrate; and
interposer layers sequentially stacked on the substrate, wherein the interposer layers form an active region and an open region, wherein the active region comprises a six-sided shape having five interior right angles and defining a cutout corner, and wherein the open region comprises a square shape and is disposed within the cutout corner of the active region, the plurality of interposer layers comprising:
a device layout pattern formed within the active region of the interposer layers; and
a stress release structure formed within the open region of the interposer layers and comprising multiple groups of openings, each group of openings comprising multiple openings oriented in a column relative to one another and sharing a longitudinal axis,
wherein each opening of a respective group of openings extends through a single interposer layer of the interposer layers, and
wherein material of at least one interposer layer of the interposer layers is disposed between adjacent openings within a respective group of openings.
18. The semiconductor device of claim 17 , wherein the multiple openings are vacant.
19. The semiconductor device of claim 17 , wherein a pattern of a layout of the multiple openings at least substantially matches at least a portion of the device layout pattern.
20. The semiconductor device of claim 17 , wherein the multiple openings extend only through every other interposer layer of the interposer layers.