Conductive structures, systems and devices including conductive structures and related methods
View Patent ↗Conductive structures include a plurality of conductive steps and a contact extending at least partially therethrough in communication with at least one of the plurality of conductive steps and insulated from at least another one of the conductive steps. Devices may include such conductive structures. Systems may include a semiconductor device and a stair step conductive structure having a plurality of contacts extending through a step of the stair step conductive structure. Methods of forming conductive structures include forming contacts in contact holes formed through at least one conductive step of a conductive structure. Methods of forming electrical connections in stair step conductive structures include forming contacts in contact holes formed through each step of the stair step conductive structure.
1. A method of forming a conductive structure, the method comprising:
forming openings intersecting conductive plates, each conductive plate being at least partially separated by a respective insulative material;
forming an insulative liner in each opening of the openings;
exposing a portion of a respective at least one conductive plate of the conductive plates in each opening of the openings;
forming a respective contact in each opening of the openings in communication with the exposed portion of the respective at least one conductive plate of the conductive plates; and
forming at least one contact to have a respective portion in communication with the respective at least one conductive plate exhibiting a width greater than a width of another portion of the contact.
2. The method of claim 1 , further comprising forming each contact to have a respective portion in communication with the respective at least one conductive plate exhibiting a width greater than a width of another portion of the contact.
3. The method of claim 1 , further comprising forming the conductive plates to comprise steps each having a lateral end portion laterally offset from a lateral end portion of an adjacent step of the steps.
4. The method of claim 1 , further comprising forming a conductive liner in each opening of the openings before forming the respective contact in each opening of the openings.
5. The method of claim 1 , wherein forming openings intersecting conductive plates comprises:
forming a mask including apertures over the conductive plates and the insulative materials; and
removing a portion of the conductive plates and the insulative materials through the apertures to form contact holes.
6. The method of claim 5 , wherein forming the contact holes comprises:
removing a portion of the mask at the apertures to increase a dimension of the apertures formed in the mask to form enlarged apertures in the mask; and
removing at least one insulative material of the insulative materials through the enlarged apertures.
7. A device, comprising:
memory cells; and
the conductive structure formed by the method of claim 1 in electrical communication with the memory cells.
8. A method of forming a conductive structure, the method comprising:
forming openings intersecting conductive plates, each conductive plate being at least partially separated by a respective insulative material, the conductive plates comprising steps each having a lateral end portion laterally offset from a lateral end portion of an adjacent step of the steps;
extending each opening through the lateral end portion of one step of the steps and through each step of the steps underlying the lateral end portion of the one step;
forming an insulative liner in each opening of the openings;
exposing a portion of a respective at least one conductive plate of the conductive plates in each opening of the openings; and
forming a respective contact in each opening of the openings in communication with the exposed portion of the respective at least one conductive plate of the conductive plates.
9. A method of forming a conductive structure, the method comprising:
forming openings intersecting conductive plates, each conductive plate being at least partially separated by a respective insulative material;
forming an insulative liner in each opening of the openings;
exposing a portion of a respective at least one conductive plate of the conductive plates in each opening of the openings comprising removing a portion of the insulative liner to expose at least a lateral side surface of the respective at least one conductive plate of the conductive plates; and
forming a respective contact in each opening of the openings in communication with the exposed portion of the respective at least one conductive plate of the conductive plates.
10. A method of forming a conductive structure, the method comprising:
forming openings intersecting conductive plates, each conductive plate being at least partially separated by a respective insulative material, the forming openings comprising:
forming a mask including apertures over the conductive plates and the insulative materials;
removing a portion of at least one insulative material of the insulative materials through the apertures to form an enlarged distal portion of the openings;
forming a material at least partially within the enlarged distal portion of each of the openings to form narrowed apertures in the mask having a width less than a width of the apertures; and
removing a portion of the conductive plates and the insulative materials through the narrowed apertures formed in the mask;
forming an insulative liner in each opening of the openings;
exposing a portion of a respective at least one conductive plate of the conductive plates in each opening of the openings; and
forming a respective contact in each opening of the openings in communication with the exposed portion of the respective at least one conductive plate of the conductive plates.
11. A method of forming a conductive structure, the method comprising:
defining a stacked volume of conductive materials extending laterally along the conductive structure;
at least partially separating each conductive material of the volume of conductive materials from an adjacent conductive material of the volume of conductive materials by insulative material;
defining contacts extending through at least one conductive material of the volume of conductive materials, wherein each contact of the contacts extends through at least one additional conductive material of the volume of conductive materials than at least one adjacent contact of the contacts; and
placing each contact of the contacts in communication with the at least one respective conductive material of the volume of conductive materials while isolating the respective contact from at least another conductive material of the volume of conductive materials; and
placing at least some of the contacts in communication with an interconnect underlying the stacked volume of conductive materials.
12. The method of claim 11 , further comprising positioning at least one conductive material of the stacked volume of conductive materials to directly overlie at least one adjacent conductive material of the stacked volume of conductive materials.
13. The method of claim 12 , further comprising separating the at least one conductive material from the at least one adjacent conductive material with the insulative material.
14. The method of claim 11 , further comprising placing each contact of the contacts in communication with the interconnect underlying the stacked volume of conductive materials.
15. The method of claim 14 , further comprising positioning at least some conductive materials of the volume of conductive materials to overlie at least one adjacent conductive material of the volume of conductive materials and the interconnect.
16. The method of claim 11 , further comprising positioning each conductive material of the volume of conductive materials to at least one of overlie or underlie an adjacent conductive material of the volume of conductive materials.
17. A system, comprising:
a semiconductor device; and
the conductive structure formed by the method of claim 11 in electrical communication with the semiconductor device.
18. A method of forming a conductive structure, the method comprising:
defining a stack of conductive plates, comprising:
positioning each conductive plate of the stack of conductive plates to at least one of overlie or underlie an adjacent conductive plate of the stack of conductive plates; and
at least partially separating each conductive plate of the stack of conductive plates from an adjacent conductive plate of the stack of conductive plates by a respective insulative material;
forming openings extending through the stack of conductive plates;
forming an insulative liner in each opening of the openings;
exposing a portion of a respective at least one conductive plate of the stack of conductive plates in each opening of the openings; and
forming a respective contact in each opening of the openings in communication with the exposed portion of the respective at least one conductive plate of the stack of conductive plates.
19. The method of claim 18 , further comprising placing each contact in communication with a common interconnect underlying the stack of conductive plates.
20. A device, comprising:
memory cells; and
the conductive structure formed by the method of claim 18 in electrical communication with the memory cells.