Ohmic contacts for semiconductor structures
View Patent ↗A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl x N y material at least partially contiguous with the semiconductor structure. The TiAl x N y material can be TiAl 3 . The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl x N y material, such that the TiAl x N y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.
1. A method for formation of an ohmic contact, the method comprising:
depositing TiAl 3 N y approximately 50 to 2000 angstroms thick contiguous to at least part of a semiconductor structure, wherein the depositing of the TiAl 3 N y is without annealing, wherein the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition, wherein y is 0 to 10; and
annealing the semiconductor structure and the TiAl 3 N y to form the ohmic contact.
2. The method of claim 1 , wherein depositing the TiAl 3 N y contiguous to at least part of the semiconductor structure comprises depositing the TiAl 3 N y at least partially contiguous with an n-doped GaN.
3. The method of claim 1 , wherein depositing the TiAl 3 N y contiguous to at least part of the semiconductor structure comprises depositing the TiAl 3 N y at least partially contiguous with at least one semiconductor material.
4. The method of claim 1 , wherein depositing the TiAl 3 N y contiguous to at least part of the semiconductor structure comprises depositing the TiAl 3 N y at least partially contiguous with at least one semiconductor material which is at least one of undoped, n-doped, and p-doped, wherein the undoped, n-doped, or p-doped semiconductor material comprises in either or both its pre- or post-doped state at least one of GaN, InGaN, AlGaN, AlGaInN, InN, GaAs, AlGaAs, AlGaAs, GaAsP, AlGaInP, GaP, AlGaP, ZnSe, SiC, Si, diamond, BN, AlN, MgO, SiO, ZnO, LiAlO 2 , SiC, Ge, InAs, InAt, InP, C, Ge, SiGe, AlSb, AlAs, AlP, BP, BAs, GaSb, InSb, Al z Ga 1-z As, InGaAs, In z Ga 1-z As, InGaP, AlInAs, AlInSb, GaAsN, AlGaP, AlGaP, InAsSb, InGaSb, AlGaAsP, AlInAsP, AlGaAsN, InGaAsN, InAlAsN, GaAlAsN, GaAsSbN, GaInNAsSb, and GaInAsSbP.
5. The method of claim 1 , further comprising manufacturing a light emitting diode (LED) semiconductor device from the semiconductor structure.
6. The method of claim 1 , wherein the TiAl 3 N y is approximately 50 to 2000 angstroms thick.
7. The method of claim 1 , wherein the TiAl 3 N y is approximately 200 angstroms thick.
8. The method of claim 1 , further comprising depositing aluminum contiguous to at least part of the deposited TiAl 3 N y such that the TiAl 3 N y is between the semiconductor structure and the aluminum.
9. The method of claim 8 , wherein the aluminum is added using at least one of atomic layer deposition, physical vapor deposition (PVD), and chemical vapor deposition (CVD).
10. The method of claim 8 , wherein the aluminum is about 5 angstroms to about 4000 angstroms thick.
11. The method of claim 8 , wherein the TiAl 3 N y is about 25 angstroms to about 300 angstroms thick.
12. The method of claim 1 , wherein the annealing takes place at or less than about 500° C. to about 1500° C.
13. The method of claim 1 , wherein the annealing takes place at less than about 800° C.
14. The method of claim 1 , wherein the annealing takes place for about 0.001 minutes to about 200 minutes.
15. The method of claim 1 , wherein the annealing takes place for about 30 seconds to about 60 seconds.
16. The method of claim 1 , wherein the TiAl 3 N y is TiAl 3 .
17. A method for formation of an ohmic contact, the method comprising:
depositing TiAl 3 about 200 angstroms to about 2000 angstroms thick contiguous to at least part of an n-doped GaN in a semiconductor structure comprising the n-doped GaN, wherein the depositing of the TiAl 3 is without annealing, wherein the depositing comprises at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition; and
annealing the semiconductor structure and the TiAl 3 at or less than about 800° C. for a duration of about 30 seconds to about 60 seconds to form the ohmic contact.
18. The method of claim 17 , wherein the TiAl 3 is formed by the depositing prior to any subsequent annealing, the method further comprising:
depositing aluminum about 5 angstroms to about 4000 angstroms thick contiguous to at least part of the TiAl 3 , such that the TiAl 3 is between the aluminum and the n-doped GaN; and
annealing the semiconductor structure and the TiAl 3 and the aluminum at or less than about 660° C. to form the ohmic contact.