Stacked semiconductor die assemblies with high efficiency thermal paths and molded underfill

1. A semiconductor die assembly, comprising:

a first die having a first functionality, the first die having a lateral region and a stacking site;

a plurality of second dies having a second functionality different than the first ∧ functionality, the second dies being arranged in a die stack including a bottom second die mounted to the stacking site of the first die and a top second die defining a top surface of the die stack;

a thermal transfer structure attached to at least the lateral region of the first die, the thermal transfer structure having a cavity in which the second dies are positioned and an upper surface above the top surface of the die stack, wherein the thermal transfer structure comprises a frame having an opening larger than a perimeter of the top surface of the top second die; and

an underfill material in the cavity between the second dies and the thermal transfer structure, wherein the underfill material covers the top surface of the die stack.

2. The semiconductor die assembly of claim 1 wherein the frame has an upper surface and the underfill material is coplanar with the upper surface of the frame.

3. The semiconductor die assembly of claim 1 wherein the frame comprises metal.

4. A semiconductor die assembly, comprising:

a package support substrate;

a first semiconductor die mounted to the package support substrate, the first die having a lateral region and a stacking area;

a die stack having a plurality of second semiconductor dies including a bottom second die attached to the stacking area of the first die and a top second die defining a top surface of the die stack;

a thermally conductive frame around the die stack, wherein the thermally conductive frame has an opening around the top surface of the die stack, a bottom surface attached to the lateral region of the first semiconductor die, an upper surface at an elevation above the top surface of the top second die, and wherein the opening of the thermally conductive frame is larger than the top surface of the top second die; and

an injected underfill material between the thermally conductive frame and the die stack, wherein the injected underfill material has a height extending to the upper surface of the thermally conductive frame.

5. The semiconductor die assembly of claim 4 wherein the top surface of the top second die has a perimeter and the opening of the frame is spaced laterally apart from the perimeter of the top surface of the top second die by a gap.

6. The semiconductor die assembly of claim 4 wherein the frame comprises a metal, metal alloy or ceramic.

7. The semiconductor die assembly of claim 4 wherein the frame comprises copper.

8. A semiconductor die assembly, comprising:

a package support substrate;

a first semiconductor die mounted to the package support substrate, the first die having a stacking site and a lateral region extending laterally from the stacking site;

a die stack including a plurality of second semiconductor dies stacked on each other, wherein the die stack has a bottom second semiconductor die mounted to the stacking site of the first die, a top second semiconductor die having a top surface defining a top surface area of the die stack, and sides;

a thermal transfer structure attached to the lateral region of the first die and surrounding the die stack, the thermal transfer structure having a cavity in which the second dies are positioned, and the thermal transfer structure having an upper surface positioned at an elevation above the top surface of the top second semiconductor die, wherein the thermal transfer structure has an opening larger than the top surface area of the die stack; and

a molded underfill material in the cavity between the second semiconductor dies and the thermal transfer structure, and the underfill material covering the sides of the die stack up to at least the top surface of the die stack.

9. The semiconductor die assembly of claim 8 wherein:

the cavity has a sidewall with an upper edge,

the thermal transfer structure has an opening larger than the top surface area of the die stack, and

the opening is defined by the upper edge of the sidewall.

10. The semiconductor die assembly of claim 8 wherein the underfill material covers the top surface of the top second semiconductor die.

11. The semiconductor die assembly of claim 8 wherein the thermal transfer structure comprises a frame.

12. The semiconductor die assembly of claim 11 wherein the frame is a metal, metal alloy or ceramic.

13. The semiconductor die assembly of claim 12 wherein the frame is copper.

14. The semiconductor die assembly of claim 8 wherein the thermal transfer structure comprises an inner sidewall spaced laterally apart from the sides of the die stack.

15. The semiconductor die assembly of claim 14 , wherein the inner sidewall of the thermal transfer structure defines the opening of the thermal transfer structure.

16. The semiconductor die assembly of claim 14 wherein

the underfill material covers the top surface of the top second semiconductor die.

17. The semiconductor die assembly of claim 16 wherein the underfill material directly contacts the top surface of the top second semiconductor die and extends to an elevation at least substantially coplanar with the upper surface of the thermal transfer structure.