Two-step data-line precharge scheme

1. An apparatus comprising:

a first bit line;

a first transistor configured to be coupled to the first bit line; and

a control circuit configured to supply a gate of the first transistor with a first voltage to turn on the first transistor, and to supply the gate of the first transistor with a second voltage higher than the first voltage to strengthen a current drive capability of the first transistor,

wherein the second voltage is greater than a gate oxide withstand voltage e first transistor.

2. The apparatus of claim 1 , further comprising:

a second bit line, the first transistor coupled between the first bit line and the second bit line.

3. The apparatus of claim 1 , further comprising:

a voltage terminal supplied with a third voltage different from each of the first voltage and the second voltage,

wherein the first transistor is coupled between the first bit line and the voltage terminal.

4. The apparatus of claim 3 , further comprising:

a second bit line, wherein the first transistor is coupled between the first bit line and the second bit line;

a second transistor coupled between the first bit line and the voltage terminal; and

a third transistor coupled between the second bit line and the voltage terminal.

5. The apparatus of claim 1 , further comprising:

a first voltage terminal supplied with the first voltage and a second voltage terminal supplied with the second voltage,

wherein the control circuit includes a second transistor coupled between the gate of the first transistor and the first voltage terminal and a third transistor coupled between the gate of the first transistor and the second voltage terminal.

6. The apparatus of claim 5 , wherein the second transistor is of first conductivity type and the third transistor is of second conductivity type.

7. The apparatus of claim 6 , wherein the control circuit includes a fourth transistor coupled between the gate of the first transistor and a third voltage terminal supplied with a lower voltage than the first and second voltages, and

wherein a gate of the fourth transistor is coupled to a gate of the third transistor.

8. The apparatus of claim 7 , wherein a gate of the second transistor is configured to receive a first precharge control signal to supply the first voltage to the gate of the first transistor, and

wherein the gate of the third transistor is configured to receive a second precharge control signal to supply the second voltage to the gate of the first transistor.

9. The apparatus of claim 1 , wherein the control circuit is configured to supply the gate of the first transistor with the first voltage to turn on the first transistor for a first portion of a precharge period, and to supply the gate of the first transistor with the second voltage to strengthen the current drive capability of the first transistor for a second portion of the precharge period.

10. The apparatus of claim 1 , wherein the first transistor comprises a first gate oxide,

wherein the control circuit includes a second transistor coupled to the gate of the first transistor, the second transistor including a second gate oxide thicker than the first gate oxide.

11. The apparatus of claim 1 , wherein the control circuit is configured to supply the gate of the first transistor with the first voltage to turn on the first transistor at a first time, and thereafter transition the gate of the first transistor from the first voltage to the second voltage for at a second time following the first time,

wherein, at the second time, a voltage of the first bit line is greater than ground.

12. A method, comprising:

supplying a gate of a first transistor, coupled to a first bit line, with a first voltage to render the first transistor conductive; and

changing a voltage at the gate of the first transistor from the first voltage to a second voltage that is higher in absolute value than the first voltage while keeping the first transistor conductive,

wherein the second voltage causes to strengthen a current drive capability of the first transistor, and

wherein the second voltage is greater than a gate oxide withstand voltage of the first transistor.

13. The method of claim 12 , wherein the changing comprises:

turning off a first switch to separate the gate of the first transistor from the first voltage; and

turning on a second switch to supply the gate of the first transistor with the second voltage.

14. The method of claim 13 , further comprising:

receiving a precharge command, wherein the supplying and the changing are carried out in response to a precharge command.

15. The method of claim 14 , further comprising:

receiving an activate command and changing the voltage at the gate of the first transistor from the second voltage to a third voltage to turn off the first transistor responsive to the activate command.

16. The method of claim 12 , wherein changing the voltage at the gate of the first transistor from the first voltage to the second voltage includes when a voltage of the first bit line is greater than ground.

17. An apparatus comprising:

a first bit line, wherein the first bit line is configured to be operatively charged with a first voltage;

a first transistor coupled to the first bit line, wherein the first transistor is configured, when turned on, to discharge the first bit line; and

a control circuit coupled to the first transistor, wherein the control circuit is configured to supply a gate of the first transistor with a second voltage to turn the first transistor on and change a voltage of the gate of the first transistor from the second voltage to a third voltage,

wherein the first voltage is between the second and the third voltages,

wherein the first transistor comprises a first gate oxide, the control circuit including a second transistor coupled to the gate of the first transistor, and the second transistor including a second gate oxide thicker than the first gate oxide.

18. The apparatus of claim 17 , wherein the control circuit further includes a third transistor coupled to the gate of the first transistor and the third transistor comprises a third gate oxide thicker than the first oxide gate.

19. The apparatus of claim 18 , wherein the second transistor is N-conductivity type and supplied with the first voltage and the third transistor is P-conductivity type and supplied with the third voltage.

20. The apparatus of claim 17 , wherein the third voltage is greater than a gate oxide withstand voltage of the first transistor.