Semiconductor structure
View Patent ↗A semiconductor device is disclosed which includes a silicide substrate, a nitride layer, two STIs, and a strain nitride. The silicide substrate has two doping areas. The nitride layer is deposited on the silicide substrate. The silicide substrate and the nitride layer have a recess running through. The two doping areas are at two sides of the recess. The end of the recess has an etching space bigger than the recess. The top of the silicide substrate has a fin-shaped structure. The two STIs are at the two opposite sides of the silicide substrate (recess). The strain nitride is spacer-formed in the recess and attached to the side wall of the silicide substrate, nitride layer, two STIs. The two doping areas cover the strain nitride. As a result, the efficiency of semiconductor is improved, and the drive current is increased.
1. A semiconductor structure comprising:
I. a silicide substrate having two doping areas;
II. a nitride layer disposed on the silicide substrate,
(a) the nitride layer and the silicide substrate having a recess structure formed thereon, the doping areas of the silicide substrate are respectively arranged on the opposite sides of the recess structure,
(b) the silicide substrate defines an etched space therein communicative with the lower end of the recess structure, the etched space having a cross section greater than that of the recess structure,
(c) a protruding structure exposingly formed in the etched space on the silicide substrate;
III. a pair of trench isolation areas disposed on the opposite sides of the silicide substrate and the recess (along the long symmetrical axis), wherein each trench isolation areas having a overlaying structure comprising an OX liner, a strain SiN liner, a SOD, and a HDP disposed from bottom to top in the above order; and
IV. a strained nitride coating disposed on the side wall that defines the recess structure covering the doping areas of the silicide substrate.
2. The semiconductor structure of claim 1 , wherein the strained nitride coating is a strained SiN liner.
3. The semiconductor structure of claim 1 , wherein the cross-section of the etching space is of a bottle shape.
4. The semiconductor structure of claim 1 , wherein the protruding structure is fin-shaped.
5. A semiconductor structure comprising:
I. a silicide substrate having a top surface and two doping areas formed thereon;
II. a nitride layer disposed on the top surface of silicide substrate, wherein
(a) a recess structure is formed into the nitride layer and the silicide substrate, the recess structure having a long symmetrical axis and a short symmetrical axis, wherein the doping areas of the silicide substrate are respectively arranged on the opposite sides of the recess structure above the bottom portion thereof and expose from the respective side walls of the recess structure,
(b) the silicide substrate defines an etched space therein at the bottom portion of the recess structure, the etched space having a cross section wider than that of the recess structure,
(c) a protruding structure is exposingly formed in the etched space on the silicide substrate at the bottom surface of the recess structure;
III. a pair of trench isolation areas disposed on the opposite sides of the silicide substrate and the recess along the long symmetrical axis, wherein each trench isolation areas having an overlying structure comprising an OX liner, a strain SiN liner, a SOD, and a HDP disposed from bottom to top in the above order; and
IV. a strained nitride coating selectively disposed on the side wall that defines the recess structure and covering the exposed portion of the doping area on the side wall of the recess structure above the bottom portion thereof.
6. The semiconductor structure of claim 1 , wherein the the strained nitride coating is a strained SiN liner.
7. The semiconductor structure of claim 1 , wherein the cross-section of the etching space is of a bottle shape.
8. The semiconductor structure of claim 1 , wherein the protruding structure is fin-shaped.