Method for measuring size of specimen
View Patent ↗A method for measuring a size of a specimen is provided. A first projected width of the specimen is obtained at a first angle with the help of an energy source then a second projected width of the specimen is obtained at a second angle with the help of the energy source. The first projected width, the first angle, the second projected width and the second angle are co-related to indirectly obtain a size of the specimen which has not been measured. The un-measured size is not directly involved with the first projected width and the second projected width.
1. A method of measuring a size, comprising:
providing a measuring apparatus with a sample, wherein said sample has a size to be measured, and said measuring apparatus has a first apparatus parameter and a second apparatus parameter which are adjustable;
adjusting said first apparatus parameter of said measuring apparatus in the presence of an energy source, to obtain a first optimized value corresponding to said first apparatus parameter;
adjusting said second apparatus parameter of said measuring apparatus in the presence of said energy source, to obtain a second optimized value corresponding to said second apparatus parameter; and
co-relating said first optimized value, said first apparatus parameter, said second optimized value and said second apparatus parameter, to indirectly obtain said size to be measured.
2. The method of measuring a size of claim 1 , wherein said size to be measured of said sample is less than 100 nanometers (nm).
3. The method of measuring a size of claim 1 , wherein said size to be measured of said sample is a structural size.
4. The method of measuring a size of claim 1 , wherein at least one of said first apparatus parameter and said second apparatus parameter is an angle.
5. The method of measuring a size of claim 4 , wherein said size to be measured is obtained by:
said size to be measured=(said second optimized value−said first optimized value×cos (said second apparatus parameter−said first apparatus parameter))/sin (said second apparatus parameter−said first apparatus parameter).
6. The method of measuring a size of claim 1 , wherein both said second optimized value and said first optimized value are independent of said size to be measured.
7. The method of measuring a size of claim 1 , wherein said energy source is at least one of an electron beam and an electromagnetic wave.
8. The method of measuring a size of claim 1 , wherein said sample is not destroyed when said second optimized value and said first optimized value are obtained and when said size to be measured are indirectly obtained.
9. The method of measuring a size of claim 1 , wherein both said second apparatus parameter and said first apparatus parameter are default values.
10. A method for measuring the thickness of a sample, comprising:
providing a sample with a size to be measured;
obtaining a first projection width of said sample at a first angle in the presence of an energy source;
obtaining a second projection width of said sample at a second angle in the presence of said energy source; and
co-relating said first projection width, said first angle, said second projection width and said second angle, to indirectly obtain said size to be measured.
11. The method for measuring the thickness of a sample of claim 10 , wherein said size to be measured of said sample is less than 45 nanometers (nm).
12. The method for measuring the thickness of a sample of claim 10 , wherein said size to be measured of said sample is a structural size.
13. The method for measuring the thickness of a sample of claim 10 , wherein said size to be measured is obtained by:
said size to be measured=(said second projection width−said first projection width×cos (said second angle−said first angle))/sin (said second angle−said first angle).
14. The method for measuring the thickness of a sample of claim 10 , wherein said energy source is at least one of an electron beam and an electromagnetic wave.
15. The method for measuring the thickness of a sample of claim 10 , wherein said sample is not destroyed when said second projection width and said first projection width are obtained as well as when said size to be measured are indirectly obtained.
16. The method for measuring the thickness of a sample of claim 10 , wherein both said second angle and said first angle are default values.
17. The method for measuring the thickness of a sample of claim 10 , wherein both said second projection width and said first projection width are optimized values.
18. The method for measuring the thickness of a sample of claim 10 , wherein said second angle is not greater than 15 degrees.
19. The method for measuring the thickness of a sample of claim 10 , wherein a transmission electron microscope (TEM) is used to obtain said second projection width and said first projection width.