IP Library Granted Patent US 8,716,723
Granted Patent B2
US 8,716,723 · App. 12/270,309 · Granted May 6, 2014

Reflective layer between light-emitting diodes

Inventors: Ding-Yuan Chen (Taichung, TW); Chia-Lin Yu (Sigang, TW); Chen-Hua Yu (Hsin-Chu, TW); Wen-Chih Chiou (Miaoli, TW)
Assignee: TSMC Solid State Lighting Ltd.
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Quick Facts
Patent No.
US 8,716,723
App. No.
12/270,309
Granted
May 6, 2014
Kind
B2
Abstract

A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.

Claims (33)

1. A light-generating device comprising:

a substrate;

a first light-emitting diode on the substrate, the first light-emitting diode comprising a first active layer;

a second light-emitting diode on the substrate, the second light-emitting diode comprising a second active layer;

a top electrode electrically coupling together the first light-emitting diode and the second light-emitting diode; and

a reflective layer located over the substrate between the first light-emitting diode and the second light-emitting diode, the reflective layer being laterally separated from the first light-emitting diode by a spacer, the reflective layer comprising a top surface closer to the substrate than the first active layer, wherein a bottom surface of the reflective layer is in direct contact with the substrate and is substantially co-planar with at least one of the first light-emitting diode and the second light-emitting diode.

2. The light-generating device of claim 1 , wherein the reflective layer comprises aluminum, silver, or other reflective materials.

3. The light-emitting device of claim 1 , wherein the first light-emitting diode is configured to emit a light with a first wavelength and a width of the first light-emitting diode is between about 0.3 to about 3 times the first wavelength.

4. The light-generating device of claim 1 , further comprising spacers located along sidewalls of the first light-emitting diode.

5. The light-generating device of claim 1 , wherein the substrate is a light absorbing substrate.

6. The light-generating device of claim 1 , further comprising a light-transmissive material over the reflective layer between the first light-emitting diode and the second light-emitting diode.

7. A light-generating device comprising:

a substrate;

a reflector over portions of the substrate, the reflector having a first thickness;

a plurality of light-emitting diodes extending through the reflector to the substrate, each of the plurality of light-emitting diodes being isolated from the reflector and comprising an active layer that is located a first distance from the substrate, the first distance being greater than the first thickness, wherein a bottom surface of the reflector is substantially co-planar with a bottom surface of at least one of the light-emitting diodes, and wherein the light-emitting diodes are electrically coupled together through a top electrode; and

a light-transmissive material over the reflector between adjacent ones of the plurality of light-emitting diodes.

8. The light-generating device of claim 7 , wherein the reflective layer comprises aluminum, silver, or other reflective materials.

9. The light-generating device of claim 7 , wherein at least one of the plurality of light-emitting diodes has a width that is between about 0.3 to about 3 times a wavelength of light emitted by the light-generating device.

10. The light-generating device of claim 7 , further comprising spacers located along sidewalls of the plurality of light-emitting diodes.

11. The light-generating device of claim 7 , wherein the substrate is a light-absorbing substrate.

12. The light-generating device of claim 7 , wherein each of the plurality of light-emitting diodes is in the shape of a circle, a rectangle, an ellipse, a triangle, or a hexagon.

13. The light-generating device of claim 7 , wherein the reflector is in physical contact with the substrate.

14. A light-generating device comprising:

a first light-emitting device and a second light-emitting device located on a substrate;

a top electrode electrically coupling the first light-emitting device to the second light-emitting device;

a reflective layer located between the first light-emitting device and the second light-emitting device, the reflective layer located to reflect light from the first light-emitting device and from the second light-emitting device away from the substrate, wherein a bottom surface of the reflective layer is substantially co-planar with a bottom surface of at least one of the first light-emitting device and the second light-emitting device; and

a plurality of spacers located between the first light-emitting device and the reflective layer and between the first and second light-emitting devices, the plurality of spacers isolating the first and second light-emitting devices from the reflective layer, wherein each of the plurality of spacers has different widths at different distances from the substrate.

15. The light-generating device of claim 14 , wherein the reflective layer comprises aluminum, silver, or other reflective materials.

16. The light-generating device of claim 14 , wherein the substrate is a light absorbing substrate.

17. The light-generating device of claim 14 , further comprising a light-transmissive material over the reflective layer between the first light-emitting diode and the second light-emitting diode.

18. The light-generating device of claim 14 , wherein the first light-emitting diode is in the shape of a circle, a rectangle, an ellipse, a triangle or a hexagon.

19. The light-generating device of claim 14 , wherein the spacer has a width that expands as the spacer gets closer to the substrate.

20. The light-generating device of claim 14 , further comprising an electrode located over the first light-emitting device and the second light-emitting device.

Assignments (6)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: EPISTAR CORPORATION
To: TAU CETI VENTURES LLC
Reel/Frame 073969/0972 →
MERGER Recorded Feb 23, 2016
From: CHIP STAR LTD.
To: EPISTAR CORPORATION
Reel/Frame 037805/0571 →
CHANGE OF NAME Recorded Feb 23, 2016
From: TSMC SOLID STATE LIGHTING LTD.
To: CHIP STAR LTD.
Reel/Frame 037809/0929 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2012
From: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
To: TSMC SOLID STATE LIGHTING LTD.
Reel/Frame 027855/0937 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2008
From: CHEN, DING-YUAN; YU, CHIA-LIN; YU, CHEN-HUA; CHIOU, WEN-CHIH
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 021831/0556 →
Continuity (1)
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