Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
View Patent ↗A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.
1. A passivating coupling material for passivating a dielectric material and for facilitating metal deposition on such a passivated dielectric material, wherein the passivating coupling material comprises:
a first organosilane having the general formula:
in which:
n 1 is an integer greater than or equal to 1,
each Si is a silicon atom;
X 1 is a functional group able to react with a surface hydroxyl site of the dielectric material,
Y 1 is either:
X 3 , which is a further functional group able to react with a surface hydroxyl site of the dielectric material,
H, which is a hydrogen atom, or
R 1 , which is an organic apolar group;
Y 2 is either:
X 4 , which is a further functional group able to react with a surface hydroxyl site of the dielectric material,
H, which is a hydrogen atom, or
R 2 , which is an organic apolar group,
B 1 , the presence of which is optional, is a bridging group,
Z 1 is either:
R 3 , which is an organic apolar group,
H, which is a hydrogen atom, or
X 5 , which is a hydrolizable functional group,
Z 2 is either:
R 4 , which is an organic apolar group,
H, which is a hydrogen atom, or
X 6 , which is a hydrolizable functional group; and
X 2 is a hydrolizable functional group; and
a second organosilane having a functional group able to react with a hydrolyzed functional group of the first organosilane, and a ligand for providing a metal nucleation site, the second organosilane having the general formula:
in which:
n 2 is an integer equal to or greater than or equal to 0,
each Si is a silicon atom;
X 7 is a functional group able to react with a hydrolyzed functional group of the first organosilane molecule,
Y 3 is either:
X 8 , which is a further functional group able to react with a hydrolyzed functional group of the first organosilane molecule,
H, which is a hydrogen atom, or
R 5 , which is an organic apolar group;
Y 4 is either:
X 9 , which is a further functional group able to react with a hydrolyzed functional group of the first organosilane molecule,
H, which is a hydrogen atom, or
R 6 , which is an organic apolar group,
B 2 , the presence of which is optional, is a bridging group,
Z 3 is either:
R 7 , which is an organic apolar group,
H, which is a hydrogen atom, or
L 1 , which is a ligand having an electron donor functionality and which is able to act as a metal nucleation site,
Z 4 is either:
R 8 , which is an organic apolar group,
H, which is a hydrogen atom, or
L 2 , which is a ligand having an electron donor functionality and which is able to act as a metal nucleation site, and
L is a ligand having an electron donor functionality and is able to act as a metal nucleation site,
wherein the first and second organosilanes together constitute a composition providing metal nucleation sites that promote electroless metal deposition.
2. A material according to claim 1 , wherein at least one of Z 1 and Z 2 of the first organosilane is, respectively, R 3 and R 4 .
3. A material according to claim 1 , wherein X 1 and X 7 and, if present, X 3 and/or X 4 and/or X 8 and/or X 9 , are selected from the group consisting of: -chloride, -bromide, iodine, acryloxy-, alkoxy-, acetamido, acetyl-, allyl-, amino-, cyano-, epoxy-, imidazolyl, mercapto-, methanosulfonato-, sulfonato-, triflouroacetamido, and urea-containing groups.
4. A material according to claim 1 , wherein B 1 and/or B 2 is a silylene or a carbene group.
5. A method of forming a passivating coupling layer according to claim 1 on a dielectric layer having hydroxyl groups on a surface thereof, the method comprising:
depositing the first organosilane on the dielectric layer and permitting at least the functional group X 1 to react with a respective hydroxyl group of the dielectric material;
hydrolyzing at least the hydrolizable functional group X 2 of the first organosilane; and
depositing the second organosilane and permitting at least the functional group X 7 to react with and bind to at least the hydrolyzed functional group X 2 of the first organosilane, whereby at least the ligand L of the second organosilane is available to act as a metal nucleation site.
6. A semiconductor device comprising:
a substrate; and
a passivated dielectric layer formed on the substrate, wherein the dielectric layer is passivated with a passivating coupling material according to claim 1 .
7. A semiconductor device according to claim 6 , wherein the dielectric layer is porous.
8. A semiconductor device according to claim 7 , wherein the porous dielectric layer is made from any one of carbonated silicon dioxide, tetraethylorthosilicate glass, and fluorine-doped tetraethylorthosilicate glass.
9. A semiconductor device according to claim 6 wherein it further comprises a metal layer formed on the passivated dielectric layer.
10. A method of manufacturing a semiconductor device comprising:
forming a dielectric layer on a substrate; and
passivating the dielectric layer according to the method of claim 5 .
11. A method of claim 10 , wherein the dielectric layer is a porous material, wherein the passivating coupling material functions to seal a porosity of the porous dielectric layer so as to retard the uptake of moisture into the porous dielectric layer.
12. A method according to claim 11 , wherein the dielectric layer is made from any one of carbonated silicon dioxide, tetraethylorthosilicate glass, and fluorine-doped tetraethylorthosilicate glass.
13. A method according to claim 10 , further comprising forming a metal layer on the passivated dielectric layer using a liquid-phase metal deposition process.
14. A method according to claim 13 , wherein forming a metal layer on the passivated dielectric layer comprises a liquid-phase metal deposition process performed at a temperature of less than about 80° C.
15. A method according to claim 10 , wherein passivating the dielectric layer comprises applying an aqueous solution containing the first organosilane on the surface of the dielectric layer.
16. A method according to claim 15 , wherein passivating the dielectric layer comprises reacting at least the functional group X 1 of the first organosilane contained in the aqueous solution faster than the dielectric material can adsorb water.
17. A method according to claim 10 , wherein at least one of the first and second organosilanes is applied in a gas phase.
18. A method according to claim 10 , wherein the at least one of the first and second organosilanes is combined with a carrier gas.
19. A method according to claim 10 , wherein at least one of the first and second organosilianes is applied as a spray in a predetermined atmosphere.
20. A method according to claim 19 , wherein the predetermine atmosphere is an inert atmosphere.