Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement
The present patent application relates to a wafer support arrangement, comprising a wafer ( 1 ), a support layer system ( 5, 6 ) and a separating layer ( 4 ), which is arranged between the support layer system ( 5, 6 ) and the wafer ( 1 ), wherein the support layer system ( 5, 6 ) (i) comprises a support layer ( 6 ) and (ii) a layer ( 5 ) from a through hardened, partially hardened or hardenable elastomer material on the separating layer side or consists of these two layers and wherein the separating layer ( 4 ) (iii) is a plasma polymer layer and (iv) the adhesive bond between the support layer system ( 5, 6 ) and the separating layer ( 4 ), after the elastomer material has through hardened, is greater than the adhesive bond between the wafer ( 1 ) and the separating layer ( 4 ).
1. A wafer support arrangement comprising:
A. a support layer;
B. a curable elastomer material layer on the support layer;
C. a plasma polymer separating layer on the curable elastomer material layer; and
D. a wafer attached to the plasma polymer separating layer;
wherein the attachment between (A), (B), and (C) after the (B) curable elastomer material has been through hardened, is stronger than the attachment between (C) and (D).
2. The wafer support arrangement according to claim 1 , further comprising:
E. a connecting material; and
F. a second support layer attached to the side of the wafer opposite the side attached to (C) the plasma polymer separating layer by (E) the connecting material.
3. The wafer support arrangement according to claim 2 , wherein (F) the second support layer is a foil.
4. The wafer support arrangement according to claim 3 , wherein the foil comprises one or more layers of PP, PE, and PET.
5. The wafer support arrangement according to claim 1 , wherein the elastomer material is a silicone.
6. The wafer support arrangement according to claim 1 , wherein the (A) support layer is a polyimide or a polyamide layer, a glass layer, or a silicon layer.
7. The wafer support arrangement according to claim 1 , wherein the heat expansion coefficient for the linear expansion of the (A) support layer deviates from that of the (D) wafer by maximum of 10*10 −6 /° C.
8. The wafer support arrangement according to claim 2 , wherein the pliancy of the (F) second support layer is greater than that of the (A) support layer.
9. The wafer support arrangement according to claim 2 , wherein the (E) connecting material layer reduces or loses its adhesion to the wafer under the effect of radiation and/or heat.
10. The wafer support arrangement according to claim 2 , wherein the (A) support layer and/or the (B) curable elastomer material and/or the (F) second support layer are configured so that they can be electrostatically charged and/or can be fixed by electrostatically charged surfaces.
11. The wafer support arrangement according to claim 2 , wherein the connecting material layer comprises an adhesive, which reduces or loses its adhesion to the wafer under the effect of radiation and/or heat.
12. A method for producing a wafer support arrangement according to claim 1 comprising
1. combining:
A. a support layer;
B. a curable elastomer material layer on the support layer; and
C. a plasma polymer separating layer on the curable elastomer material layer; and
2. attaching:
D. a wafer to the (C) plasma polymer separating layer; and
3. curing the curable elastomer material layer so that the attachment between (A) the support layer, (B) the curable elastomer material layer, and (C) the plasma polymer separating layer is stronger than the attachment between (C) the plasma polymer separating layer and (D) the wafer.
13. The method according to claim 12 , further comprising:
4. thinning the side of the wafer opposite to the (A) support layer.
14. The method according to claim 13 , further comprising:
5. applying (E) a connecting material layer and (F) a second support layer to the side of the wafer opposite to the (A) support layer.
15. The method according to claim 14 , further comprising:
6. separating the (D) wafer and the (C) plasma polymer separating layer.
16. The method according to claim 15 , wherein the separation takes place mechanically.
17. The method according to claim 15 , wherein separation takes place using UV radiation and/or thermal energy.
18. The method according to claim 12 , further comprising:
4. slicing the wafer.
19. A wafer support arrangement comprising:
A. a support layer;
B. a silicon curable elastomer material layer on the support layer;
C. a plasma polymer separating layer on the curable elastomer material layer;
D. a wafer attached to the plasma polymer separating layer;
E. a connecting material; and
F. a second support layer attached to the side of the wafer opposite the side attached to (C) the plasma polymer separating layer by (E) the connecting material;
wherein the attachment between (A), (B), and (C) after the (B) curable elastomer material has been through hardened, is stronger than the attachment between (C) and (D).