Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
View Patent ↗Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) 2 , wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R 1 -R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 R 3 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from hydrogen and C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
1. A precursor composition comprising:
a precursor of the formula M(Cp) 2 wherein M is Ba or Sr, and Cp is cyclopentadienyl of the formula:
wherein each of R 1 -R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 R 3 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from hydrogen and C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M; and
a solvent medium comprising a solvent species selected from the group consisting of C 3 -C 12 alkanes, C 2 -C 12 ethers, C 6 -C 12 aromatics, C 8 -C 16 arylalkanes, C 10 -C 25 arylcyloalkanes, and further alkyl-substituted forms of such aromatic, arylalkane and arylcyloalkane species, wherein the further alkyl substituents in the case of multiple alkyl substituents may be the same as or different from one another and wherein each is independently selected from C 1 -C 8 alkyl.
2. The precursor composition of claim 1 , wherein the solvent medium comprises a solvent species selected from the group consisting of xylene, tetrahydronaphthalene, and alkyl-substituted tetrahydronaphthalene.
3. The precursor composition according to claim 2 , comprising bis(pentamethylcyclopentadienyl)strontium.
4. The precursor composition according to claim 1 , comprising bis(pentamethylcyclopentadienyl)strontium and xylene.
5. The precursor composition according to claim 1 , comprising bis(pentamethylcyclopentadienyl)strontium and tetrahydronaphthalene.
6. The precursor composition according to claim 2 , comprising bis(tetramethyl-n-propylcyclopentadienyl)strontium.
7. The precursor composition according to claim 1 , comprising bis(tetramethyl-n-propylcyclopentadienyl)strontium and xylene.
8. The precursor composition according to claim 1 , comprising bis(tetramethyl-n-propylcyclopentadienyl)strontium and tetrahydronaphthalene.
9. The precursor composition of claim 1 , wherein the precursor is selected from the group consisting of bis(pentamethylcyclopentadienyl)strontium and bis(tetramethyl-n-propylcyclopentadienyl)strontium, and the solvent medium is selected from the group consisting of xylene and tetrahydronaphthalene.
10. A method of depositing metal on a substrate, comprising volatilizing a precursor composition to form precursor vapor, and contacting the precursor vapor with the substrate to deposit said metal thereon, wherein the precursor composition comprises a precursor selected from bis(pentamethylcyclopentadienyl)strontium and bis(tetramethyl-n-propylcyclopentadienyl)strontium, and a solvent medium selected from the group consisting of xylene and tetrahydronaphthalene.
11. The method of claim 10 , wherein the precursor composition comprises bis(pentamethylcyclopentadienyl)strontium.
12. The method of claim 11 , wherein the precursor composition further comprises xylene.
13. The method of claim 10 , wherein the precursor composition comprises bis(tetramethyl-n-propylcyclopentadienyl)strontium.
14. The method of claim 13 , wherein the precursor composition further comprises xylene.
15. The method of claim 10 , comprising chemical vapor deposition or atomic layer deposition.
16. The method of claim 15 , comprising liquid delivery or solid delivery of the precursor.
17. The method of claim 11 , wherein the precursor composition further comprises tetrahydronaphthalene.
18. The method of claim 13 , wherein the precursor composition further comprises tetrahydronaphthalene.
19. A precursor composition comprising:
a precursor of the formula M(Cp) 2 wherein M is Ba or Sr, and Cp is cyclopentadienyl of the formula:
wherein each of R 1 -R 5 is the same as or different from one another, with each being independently selected from among hydrogen, C 1 -C 12 alkyl, C 1 -C 12 amino, C 6 -C 10 aryl, C 1 -C 12 alkoxy, C 3 -C 6 alkylsilyl, C 2 -C 12 alkenyl, R 1 R 2 R 3 NNR 3 , wherein R 1 , R 2 and R 3 may be the same as or different from one another and each is independently selected from hydrogen and C 1 -C 6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M; and
a solvent medium comprising a solvent species selected from the group consisting of C 3 -C 12 alkanes, C 2 -C 12 ethers, C 6 -C 12 aromatics, C 7 -C 16 arylalkanes, C 10 -C 25 arylcyloalkanes, and further alkyl-substituted forms of such aromatic, arylalkane and arylcyloalkane species, wherein the further alkyl substituents in the case of multiple alkyl substituents may be the same as or different from one another and wherein each is independently selected from C 1 -C 8 alkyl, wherein all R 1 -R 5 of both Cp moieties are not simultaneously all methyl when the solvent medium comprises a C 7 arylalkane.