Method for in-situ aberration measurement of optical imaging system in lithographic tools
View Patent ↗A method for in-situ aberration measurement in an optical imaging system of lithographic tools. According to the method, a reticle pattern is imaged to form an imaged pattern by transmitting beams through a reticle via the optical imaging system. The imaged reticle pattern is shaped to have plural groups of imaged linewidths. The plural groups of imaged linewidths are measured using either of an image sensor, a CD-SEM and a microscope by modifying the intensity distribution at an exit pupil plane of the optical imaging system. The asymmetry and ununiformity of the imaged linewidths are calculated. Aberrations of the optical imaging system are calculated.
1. A method for in-situ aberration measurement in an optical imaging system of lithographic tools, the optical imaging system comprising:
a light source for producing light beams;
an illumination system for adjusting the intensity distribution of the beams radiated by the light source;
an optical imaging apparatus for imaging a reticle pattern formed on a reticle onto a wafer;
a reticle stage for supporting and accurately positioning the reticle;
a wafer stage for supporting and accurately positioning the wafer, characterized in that the method comprises the steps of:
(a) imaging the reticle pattern to form an imaged pattern by transmitting the beams through the reticle via the optical imaging system, the imaged reticle pattern being shaped to have plural groups of imaged linewidths;
(b) measuring the plural groups of imaged linewidths of the imaged pattern using either of an image sensor, a CD-SEM and a microscope by modifying the intensity distribution at an exit pupil plane of the optical imaging system;
(c) calculating the asymmetry and ununiformity of the imaged linewidths and calculating aberrations of the optical imaging system.
2. The method for in-situ aberration measurement in an optical imaging system of a lithographic tools as claimed in claim 1 , characterized in that the imaged linewidths comprise a linewidth of an aerial image, a linewidth of a photoresist after exposure and development, and a linewidth of a pattern after etching.
3. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that the reticle comprises a binary mask and a phase-shifted mask.
4. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 3 , characterized in that the phase-shifted mask is selected from the group consisting of an alternating phase-shifted mask, an attenuated phase-shifted mask and a chromeless phase-shifted mask.
5. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that the reticle pattern is composed of at least one structure selected from the group consisting of three bars, two bars, multiple bars, and a contact hole.
6. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that the intensity distribution at the exit pupil plane of the optical imaging system is modified by changing critical dimensions or shapes of a mark or changing the phase shift status of the mark.
7. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 6 , characterized in that the critical dimensions include the size of each of compositions of the mark and a distance between the compositions of the mark.
8. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that the intensity distribution at the exit pupil plane of the optical imaging system is modified by adjusting the numerical aperture of an object lens.
9. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that the intensity distribution at the exit pupil plane of the optical imaging system is modified by varying illumination partial coherence or illumination modes.
10. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 9 , characterized in that the illumination modes include conventional illumination, annular illumination, dipole illumination, and quadpole illumination.
11. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that the light source is selected from the group consisting of UV, DUV, and EUV light sources selected from the group consisting of a mercury lamp and an excimer laser.
12. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that
the aberrations of the optical imaging system are wavefront aberrations and
the wavefront aberrations include coma, spherical, astigmatism, and trefoil.
13. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that
the imaged pattern includes thereon a first line, a second line and a third line in the order of the first line, the second line and the third line, and
the asymmetry of the imaged linewidths is calculated by subtracting the linewidth of the third line from the linewidth of the first line.
14. The method for in-situ aberration measurement in an optical imaging system of lithographic tools as claimed in claim 1 , characterized in that
the imaged pattern includes thereon a first line, a second line and a third line in the order of the first line, the second line and the third line, and
the ununiformity of the imaged linewidths is calculated by subtracting the sum of the linewidths of the first and third lines from two times of the linewidth of the second line.