Power amplifier with pre-distorter
View Patent ↗Amplifier apparatus comprising a power amplifier having an operating frequency in the radio frequency or microwave or higher ranges and a pre-distorter, the characteristics of the power amplifier comprising a distortion from a linear transfer function. The pre-distorter comprises a non-linear path and a linear path including amplifiers having substantially identical physical characteristics, an input divider responsive to an amplifier input signal for applying respective pre-distorter input signals to the paths, and an output coupler for combining the signals from the linear path and the non-linear path to produce a pre-distorted signal. The characteristics of the pre-distorter comprise a distortion relative to a linear transfer function that compensates for the distortion of the transfer function of the power amplifier.
1. Amplifier apparatus having an operating frequency in the radio frequency or microwave or higher ranges comprising:
a pre-distorter for a power amplifier, the characteristics of said power amplifier comprising a distortion from a linear transfer function, said pre-distorter comprising a first path including a first pre-distorter amplifier, a second path including a second pre-distorter amplifier, said first and second pre-distorter amplifiers having substantially identical physical characteristics, pre-distorter input means responsive to an input signal for applying respective first and second pre-distorter input signals to said first and second paths, and combining means for combining first and second path signals from said first and second paths to produce a pre-distorted signal, the transfer characteristics of said pre-distorter comprising a distortion relative to a linear transfer function such as to tend to compensate for the distortion of the transfer function of said power amplifier, wherein said input means and said combining means are each arranged to introduce substantially orthogonal relative phase shifts between said first and second paths, such that said first and second path signals are combined substantially in anti phase to produce said pre-distorted signal, one of said input means and said combining means presenting high-pass and the other low-pass transfer characteristics whose variations with frequency tend to compensate each other, and said power amplifier comprising at least one stage of similar technology and topology to said first and second pre-distorter amplifiers but of larger power capacity.
2. Amplifier apparatus as claimed in claim 1 and including said power amplifier connected to receive said pre-distorted signal.
3. Amplifier apparatus as claimed in claim 2 , wherein said power amplifier is connected to receive said pre-distorted signal through a variable attenuator.
4. Amplifier apparatus as claimed in claim 1 , wherein said input means and said combining means comprise reactive and resistive components introducing phase shifts of substantially 90° between said first and second path signals.
5. Amplifier apparatus as claimed in claim 4 , wherein said input means and said combining means consist substantially of passive components.
6. Amplifier apparatus as claimed in claim 1 , wherein said first pre-distorter amplifier is arranged to operate at non-linear conditions close to saturation, similar to the operating conditions of said power amplifier, and said second pre-distorter amplifier is arranged to operate at substantially more linear conditions.
7. Amplifier apparatus as claimed in claim 6 , wherein said non-linear path amplifier is arranged to operate at conditions of bias voltage and signal amplitude substantially equal to those of at least a final stage of said power amplifier and said linear path amplifier is arranged to operate at smaller signal amplitude but at similar conditions of bias voltage.
8. Amplifier apparatus as claimed in claim 1 , wherein substantially all the components of said pre-distorter are formed in or on a common semiconductor substrate.
9. Amplifier apparatus as claimed in claim 8 , wherein components of said power amplifier are formed in said common semiconductor substrate.
10. Amplifier apparatus as claimed in claim 9 , wherein substantially all the components of at least a first stage of said power amplifier are formed in said common semiconductor substrate.
11. Amplifier apparatus as claimed claim 1 , wherein the outputs of said input means and the inputs of said combining means each present an impedance substantially matched to 100 Ohms, and the input of said input means and the output of said combining means each present an impedance substantially matched to 50 Ohms.
12. Amplifier apparatus as claimed in claim 2 , wherein said input means and said combining means comprise reactive and resistive components introducing phase shifts of substantially 90° between said first and second path signals.
13. Amplifier apparatus as claimed in claim 3 , wherein said input means and said combining means comprise reactive and resistive components introducing phase shifts of substantially 90° between said first and second path signals.
14. Amplifier apparatus as claimed in claim 2 , wherein said first pre-distorter amplifier is arranged to operate at non-linear conditions close to saturation, similar to the operating conditions of said power amplifier, and said second pre-distorter amplifier is arranged to operate at substantially more linear conditions.
15. Amplifier apparatus as claimed in claim 3 , wherein said first pre-distorter amplifier is arranged to operate at non-linear conditions close to saturation, similar to the operating conditions of said power amplifier, and said second pre-distorter amplifier is arranged to operate at substantially more linear conditions.
16. Amplifier apparatus as claimed in claim 2 , wherein substantially all the components of said pre-distorter are formed in or on a common semiconductor substrate.
17. Amplifier apparatus as claimed in claim 3 , wherein substantially all the components of said pre-distorter are formed in or on a common semiconductor substrate.
18. Amplifier apparatus as claimed in claim 4 , wherein substantially all the components of said pre-distorter are formed in or on a common semiconductor substrate.
19. Amplifier apparatus as claimed claim 2 , wherein the outputs of said input means and the inputs of said combining means each present an impedance substantially matched to 100 Ohms, and the input of said input means and the output of said combining means each present an impedance substantially matched to 50 Ohms.
20. Amplifier apparatus as claimed claim 3 , wherein the outputs of said input means and the inputs of said combining means each present an impedance substantially matched to 100 Ohms, and the input of said input means and the output of said combining means each present an impedance substantially matched to 50 Ohms.