Sputtering target/backing plate bonded body
View Patent ↗Provided is a sputtering target/backing plate assembly having a structure such that pure copper is embedded in a backing plate position at the central portion of the target, within sputtering target/copper-zinc alloy backing plate bonded bodies. Consequently, provided is a simple structure of sputtering target/backing plate capable of sufficiently accommodating further high-power sputtering without deteriorating the characteristics of a copper-zinc alloy backing plate that is inexpensive and excels in strength and anti-eddy current characteristics.
1. A sputtering target/backing plate assembly comprising:
a sputtering target in a form of a disc-shaped plate of a predetermined diameter, the sputtering target having an exposed sputtering face and a rear face;
a copper-zinc alloy backing plate of a predetermined thickness bonded to the rear face of the sputtering target; and
a separate embedding of pure copper embedded between the copper-zinc alloy backing plate and the sputtering target, the embedding being in contact with a central portion of the rear face of the sputtering target, the embedding being a disc-shaped plate of a diameter that is less than the predetermined diameter of the sputtering target and being of a material different than that of the sputtering target.
2. The sputtering target/backing plate assembly according to claim 1 , wherein the diameter of the embedding of pure copper is 1/20 to ½ of the predetermined diameter of the sputtering target.
3. The sputtering target/backing plate assembly according to claim 2 , wherein the embedding of pure copper has a thickness that is ⅕ to ⅘ of the predetermined thickness of the copper-zinc alloy backing plate.
4. The sputtering target/backing plate assembly according to claim 3 , wherein the thickness of the embedding of pure copper is ¼ to 2/4 of the predetermined thickness of the copper-zinc alloy backing plate.
5. The sputtering target/backing plate assembly according to claim 4 , wherein the target is formed from tantalum or tantalum-based alloy.
6. The sputtering target/backing plate assembly according to claim 5 , wherein the sputtering target is diffusion bonded to the copper-zinc alloy backing plate.
7. The sputtering target/backing plate assembly according to claim 6 , wherein the embedding of pure copper is made of oxygen-free copper.
8. The sputtering target/backing plate assembly according to claim 7 , wherein the copper-zinc alloy backing plate is formed from copper-zinc based copper alloy containing 5 to 40 wt % of zinc.
9. The sputtering target/backing plate assembly according to claim 2 , wherein the target is formed from tantalum or tantalum-based alloy.
10. The sputtering target/backing plate assembly according to claim 9 , wherein the sputtering target is diffusion bonded to the copper-zinc alloy backing plate.
11. The sputtering target/backing plate assembly according to claim 10 , wherein the copper-zinc alloy backing plate is formed from copper-zinc based copper alloy containing 5 to 40 wt % of zinc.
12. The sputtering target/backing plate assembly according to claim 1 , wherein the embedding of pure copper has a thickness that is ⅕ to ⅘ of the predetermined thickness of the copper-zinc alloy backing plate.
13. The sputtering target/backing plate assembly according to claim 12 , wherein the thickness of the embedding of pure copper is ¼ to 2/4 of the predetermined thickness of the copper-zinc alloy backing plate.
14. The sputtering target/backing plate assembly according to claim 1 , wherein the target is formed from tantalum or tantalum-based alloy.
15. The sputtering target/backing plate assembly according to claim 1 , wherein the sputtering target is diffusion bonded to the copper-zinc alloy backing plate.
16. The sputtering target/backing plate assembly according to claim 1 , wherein the embedding of pure copper is made of oxygen-free copper.
17. The sputtering target/backing plate assembly according to claim 1 , wherein the copper-zinc alloy backing plate is formed from copper-zinc based copper alloy containing 5 to 40 wt % of zinc.