Rapid memory buffer write storage system and method

1. A memory write method comprising:

issuing a first program command to a memory;

loading data into a buffer of said memory;

loading the target row address after said data is loaded in said buffer of said memory and before an attempt is made to write said data into a memory array from said buffer; and

issuing a program confirm command.

2. A memory write method of claim 1 wherein a column address is specified prior to loading of the data.

3. A memory write method of claim 1 wherein the target column address includes column bits from the physical block address (PBA).

4. A memory write method of claim 1 wherein the target row address includes row bits from the physical block address (PBA).

5. A memory write method of claim 1 wherein a starting column address is specified that is not aligned with the beginning of the row.

6. A memory write method of claim 1 wherein bursts of loading data into said buffer of said memory and loading the target row address corresponding to the data is at the discretion of firmware.

7. A memory write method of claim 1 wherein said buffer is a page buffer included in said memory.

8. A memory system comprising:

a host for processing information, wherein said host performs a rapid memory pages buffer write operation with a reordered sequence in which a column address is specified prior to a data transfer and a row address is issued after the data transfer;

a memory for storing said information, including a memory array for storing information and a buffer for temporarily storing information before the information is forwarded to the memory array; and

a memory controller for controlling communication of said information between said host and said memory, including loading a portion of an address after data is loaded in said buffer of said memory and before an attempt is made to write said data into a memory array from said buffer.

9. A memory system of claim 8 wherein said buffer is a page buffer in said memory controller routes data rapidly to the buffer of said memory without buffering in said memory controller during a complete determination of corresponding address information.

10. A memory system of claim 8 wherein said buffer in said memory stores said data while a row address of a physical block address (PBA) associated with said data is determined by a memory controller.

11. A memory system of claim 8 wherein a load column address defaults to zero and data is loaded into said buffer before a row address is issued.

12. A memory system of claim 8 wherein the memory includes a cache that accepts additional information.

13. A memory system of claim 8 wherein data is rapidly loaded from the host into the buffer and cache while the memory controller performs various address resolution operations, including determination of row address information.

14. A memory system of claim 8 wherein the starting column address is specified by the two least significant bits of the logical block address (LBA) from the host.

15. A memory alteration method comprising:

receiving an indication to write data to a cell;

storing data and a first portion of memory cell address information rapidly in a buffer of the memory, wherein the first portion of said memory cell address information is determined before the data is stored in the buffer; and

determining memory cell identification or address information, wherein another second portion of the memory cell address information is determined while the data is stored in the buffer of the memory.

16. A memory alteration method of claim 15 wherein the second portion of the memory cell address information determined while the data is stored in the buffer of the memory is a row address.

17. A memory alteration method of claim 15 wherein a page buffer in the memory temporarily stores the data until the address value of the physical block address (PBA) is determined.

18. A memory alteration method of claim 15 further comprising flushing the data from the page buffer into a memory array.