Silicon-based sub-mount for an opto-electronic device

1. A sub-mount for an optoelectronic device comprising: a silicon substrate having a thickness in the range of 350 μm-700 μm and having a front-side surface and a back-side surface; a singular die attach pad on which to mount the optoelectronic device, the die attach pad disposed on the front-side surface of the substrate; a front side via structure having a first bottom and inclined walls such that a cross-section of the front side via structure becomes increasingly narrower from the front-side surface toward the back-side surface; a back side via structure having a second bottom and inclined walls such that a cross-section of the back side via structure becomes increasingly narrower from the back-side surface toward the front-side surface, wherein the first bottom and the second bottom are not a same size, and wherein the first bottom and the second bottom meet between the front-side surface and the back-side surface; an insulating layer over the inclined walls of the back side via structure; feed-through metallization over the insulating layers in the back side via structure; a first contact pad disposed on the front-side surface of the substrate and directly electrically contacted at the front-side surface of the substrate to the die attach pad; and a second contact pad disposed on the front-side surface of the substrate and not directly electrically contacted at the front-side surface to the die attach pad, wherein the feed-through metallization in at least one of the via structures electrically couples the die attach pad to a first surface mount device (“SMD”) pad on the back-side surface of the substrate.

2. The sub-mount of claim 1 wherein the silicon substrate has a thickness in the range of 400 μm-600 μm.

3. The sub-mount of claim 1 wherein each via structure has a cross-section shaped like two substantially regular trapezoids, one atop the other and inverted with respect to one another.

4. The sub-mount of claim 3 wherein feed-through metallization in at least one of the via structures electrically couples the first contact pad to the first SMD pad on the back-side surface of the substrate, and

wherein feed-through metallization in at least another one of the via structures electrically couples the second contact pad to a second SMD pad on the back-side surface of the substrate.

5. The sub-mount of claim 4 further comprising a thermal pad on the back-side surface of the substrate.

6. The sub-mount of claim 1 wherein the distance between the back-side surface of the substrate and the die attach pad on the front-side surface is substantially the same as the thickness of the substrate.

7. An optoelectronic device package comprising: a sub-mount comprising a silicon substrate having a thickness in the range of 350 μm-700 μm and having a front-side surface and a back-side surface; a singular die attach pad, an anode pad and a cathode pad on the front-side surface of the substrate; first and second SMD pads on the back-side surface of the substrate; a front side via structure having a first bottom and inclined walls such that a cross-section of the front side via structure becomes increasingly narrower from the front-side surface toward the back-side surface; a back side via structure having a second bottom and inclined walls such that a cross-section of the back side via structure becomes increasingly narrower from the back-side surface toward the front-side surface, wherein the first bottom and the second bottom are not a same size, and wherein the first bottom and the second bottom meet between the front-side surface and the back-side surface; an insulating layer over the inclined walls of the back side via structure; feed-through metallization over the insulating layers in the back side via structure; and a light emitting device mounted to the die attach pad; wherein one of the anode pad and the cathode pad is directly electrically contacted at the front-side surface to the die attach pad and the other of the anode pad and the cathode pad is not directly electrically contacted at the front-side surface to the die attach pad; wherein the feed-through metallization in at least one of the via structures electrically couples the anode pad to the first SMD pad and wherein the feed-through metallization in at least another one of the via structures electrically couples the cathode pad to the second SMD pad.

8. The package of claim 7 wherein the silicon substrate has a thickness in the range of 400 μm-600 μm.

9. The package of claim 7 wherein each via structure has a cross-section shaped like two substantially regular trapezoids, one atop the other and inverted with respect to one another.

10. The package of claim 9 wherein the distance between the back-side surface of the substrate and the die attach pad on the front-side surface is substantially the same as the thickness of the substrate.

11. The package of claim 10 wherein the light emitting device comprises a LED chip.

12. The package of claim 7 wherein the anode pad is electrically coupled to the die attach pad, such that the die attach pad is electrically coupled to the first SMD pad.

13. A sub-mount for an optoelectronic device comprising: a silicon substrate having a front-side surface and a back-side surface; a singular die attach pad disposed on the front-side surface of the substrate; a front side via structure having a first bottom and inclined walls such that a cross-section of the front side via structure becomes increasingly narrower from the front-side surface toward the back-side surface; a back side via structure having a second bottom and inclined walls such that a cross-section of the back side via structure becomes increasingly narrower from the back-side surface toward the front-side surface, wherein the first bottom and the second bottom are not a same size, and wherein the first bottom and the second bottom meet between the front-side surface and the back-side surface; an insulating layer over the inclined walls of the inclined walls of the back side via structure; feed-through metallization over the insulating layers in the back side via structure; a first contact pad disposed on the front-side surface of the substrate and directly electrically contacted at the front-side surface to the die attach pad; and a second contact pad disposed on the front-side surface of the substrate and not directly electrically contacted at the front-side surface to the die attach pad, wherein the feed-through metallization in at least one of the via structures electrically couples the die attach pad to a first pad on the back-side surface of the substrate.

14. The sub-mount of claim 13 wherein the silicon substrate has a thickness in the range of 400 μm-600 μm.

15. The sub-mount of claim 13 wherein each via structure has a cross-section shaped like two substantially regular trapezoids, one atop the other and inverted with respect to one another.

16. The sub-mount of claim 13 :

wherein feed-through metallization in at least one of the via structures electrically couples the first contact pad to the first pad on the back-side surface of the substrate, and

wherein feed-through metallization in at least another one of the via structures electrically couples the second contact pad to the second pad on the back-side surface of the substrate.

17. The sub-mount of claim 13 further comprising a thermal pad on the back-side surface of the substrate.

18. The sub-mount of claim 13 wherein the distance between the back-side surface of the substrate and the die attach pad on the front-side surface is substantially the same as the thickness of the substrate.