Method for fabricating EUVL mask
View Patent ↗A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.
1. A method for fabricating an extreme ultraviolet lithography (EUVL) mask comprising:
an etching step of etching at least a part of an absorption layer of an EUVL mask by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas; and
an oxidant feed step of feeding an oxidant to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.
2. A method for fabricating an EUVL mask according to claim 1 ; wherein the oxidant is water.
3. A method for fabricating an extreme ultraviolet lithography (EUVL) mask comprising: etching at least a part of an absorption layer of an EUVL mask by allowing a charged particle beam to irradiate the absorption layer under feed of a halogenated xenon gas and while feeding together with the halogenated xenon gas an oxidant to form an oxidized layer at a side surface of the absorption layer that is not etched.
4. A method for fabricating an EUVL mask according to claim 3 ; wherein the oxidant is ozone gas.
5. A method for fabricating an EUVL mask according to claim 1 ; further comprising the steps of alternately repeating for a plurality of times the etching step and the oxidant feed step.
6. A method of repairing an extreme ultraviolet lithography (EUVL) mask formed with an absorption layer having a defect, comprising the steps of:
etching a zone of the absorption layer corresponding to the defect by irradiating the zone with a charged particle beam under feed of a halogenated xenon gas; and
feeding an oxidant to the absorption layer to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.
7. A method according to claim 6 ; wherein the step of feeding the oxidant comprises feeding the oxidant after the etching step.
8. A method according to claim 7 ; wherein the oxidant is water.
9. A method according to claim 6 ; wherein the oxidant is water.
10. A method according to claim 6 ; wherein the step of feeding the oxidant comprises feeding the oxidant together with the halogenated xenon gas.
11. A method according to claim 10 ; wherein the oxidant is ozone gas.