Phase change memory cells delineated by regions of modified film resistivity
View Patent ↗A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
1. A Phase Change Memory (PCM) device comprising:
a substrate having an upper surface and including a set of electrical via conductors formed therein having exposed top surfaces;
a PCM material layer formed on said upper surface in electrical contact with said exposed top surfaces of said via conductors;
an encapsulating layer composed of an electrically conductive material formed on top of said PCM material layer;
a set of PCM cells formed by portions of said encapsulating layer and portions of said PCM material layer in contact with said top surface of said electrical conductors; and
said PCM cells being separated by high electrical resistance, modified regions of said PCM material layer and high electrical resistance, modified regions of said encapsulating layer.
2. The Phase Change Memory (PCM) device of claim 1 wherein:
said encapsulating layer is composed of material selected from the group consisting of conductors and semiconductor materials; and
said PCM material layer is composed of a chalcogenide material.
3. The Phase Change Memory (PCM) device of claim 1 wherein said high electrical resistance regions of said PCM material layer and said high electrical resistance regions of said encapsulating layer comprise ion implanted and annealed regions.
4. The Phase Change Memory (PCM) device of claim 3 wherein said ions are selected from the group consisting of oxygen, nitrogen, and carbon.
5. The Phase Change Memory (PCM) device of claim 2 wherein said high electrical resistance regions of said PCM material layer and said high electrical resistance regions of said encapsulating layer comprise oxygen ion implanted and annealed regions.
6. The Phase Change Memory (PCM) device of claim 5 wherein said ions are selected from the group consisting of oxygen, nitrogen, and carbon.
7. The Phase Change Memory (PCM) device of claim 1 wherein a central via which serves as a pass-through contact is juxtaposed with a pair of said PCM cells.
8. The Phase Change Memory (PCM) device of claim 1 wherein a central via which serves as a pass-through contact is juxtaposed with a pair of said PCM cells with said central via including via conductors in series with unmodified regions of said PCM material layer and unmodified regions of said encapsulating layer.
9. A Phase Change Memory (PCM) device comprising:
a dielectric layer having an upper surface;
a set of electrical via conductors extending through said dielectric layer to said upper surface;
each of said electrical via conductors having top surfaces;
a PCM material layer formed on said upper surface in electrical contact with said top surfaces of said via conductors;
an encapsulating layer composed of an electrically conductive material formed on top of said PCM material layer;
a set of PCM cells formed by portions of said encapsulating layer and portions of said PCM material layer in contact with said top surface of said via conductors; and
said PCM cells being separated by high electrical resistance, modified regions of said PCM material layer and high electrical resistance, modified regions of said encapsulating layer.
10. The Phase Change Memory (PCM) device of claim 9 wherein said high electrical resistance regions of said PCM material layer and said high electrical resistance regions of said encapsulating layer comprise oxygen ion implanted and annealed regions.
11. The Phase Change Memory (PCM) device of claim 9 wherein said high electrical resistance regions of said PCM material layer and high electrical resistance regions of said encapsulating layer comprise insulating material.
12. The Phase Change Memory (PCM) device of claim 9 wherein said high electrical resistance regions of said PCM material layer and said high electrical resistance regions of said encapsulating layer have been implanted with ions.
13. The Phase Change Memory (PCM) device of claim 12 wherein said high electrical resistance regions of said PCM material layer and high electrical resistance regions of said encapsulating layer comprise insulating material.
14. The Phase Change Memory (PCM) device of claim 9 wherein:
said encapsulating conductive material layer is composed of material selected from the group consisting of conductors and semiconductor materials; and
said PCM material layer is composed of a chalcogenide material.
15. The Phase Change Memory (PCM) device of claim 14 wherein said ions are selected from the group consisting of oxygen, nitrogen, and carbon.
16. The Phase Change Memory (PCM) device of claim 14 wherein said high electrical resistance regions of said PCM material layer and high electrical resistance regions of said encapsulating layer comprise insulating material.
17. The Phase Change Memory (PCM) device of claim 14 wherein said high electrical resistance regions of said PCM material layer and said high electrical resistance regions of said encapsulating layer have been implanted with ions.
18. The Phase Change Memory (PCM) device of claim 17 wherein said high electrical resistance regions of said PCM material layer and high electrical resistance regions of said encapsulating layer comprise insulating material.
19. The Phase Change Memory (PCM) device of claim 17 wherein said ions are selected from the group consisting of oxygen, nitrogen, and carbon.
20. The Phase Change Memory (PCM) device of claim 19 wherein said high electrical resistance regions of said PCM material layer and said high electrical resistance regions of said encapsulating layer comprise oxygen ion implanted and annealed regions.