Semiconductor device and method of forming a wafer level package with top and bottom solder bump interconnection
View Patent ↗A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.
1. A method of making a semiconductor device, comprising:
providing a copper carrier;
forming a plurality of first bumps over the copper carrier;
disposing a first semiconductor die including a plurality of contact pads over the copper carrier with the contact pads oriented away from the copper carrier;
depositing an encapsulant over the copper carrier, first bumps, and first semiconductor die;
removing a portion of the encapsulant to expose the first bumps and the contact pads of the first semiconductor die;
forming a conductive layer over a surface of the encapsulant to contact an exposed portion of the first bumps and the contact pads of the first semiconductor die; and
removing the copper carrier after removing the portion of the encapsulant.
2. The method of claim 1 , further including forming indentations in the copper carrier for receiving the first bumps.
3. The method of claim 1 , further including forming an insulating layer over the conductive layer and encapsulant.
4. The method of claim 1 , further including disposing a second semiconductor die over the first semiconductor die.
5. The method of claim 1 , further including:
stacking a plurality of the semiconductor devices; and
electrically connecting the semiconductor devices through the first bumps.
6. The method of claim 1 , further including forming a second bump over the first bump.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a plurality of first bumps over the substrate;
disposing a first semiconductor die including contact pads over the substrate with the contact pads oriented away from the substrate;
depositing an encapsulant over the substrate, first bumps, and first semiconductor die;
removing a first portion of the encapsulant to expose the first bumps and contact pads of the first semiconductor die; and
forming a conductive layer over a surface of the encapsulant and extending from an exposed portion of the first bumps to the contact pads of the first semiconductor die.
8. The method of claim 7 , further including removing the substrate.
9. The method of claim 6 , wherein the substrate includes copper.
10. The method of claim 6 , further including:
forming indentations in the substrate; and
forming the first bumps over the indentations.
11. The method of claim 6 , further including forming an insulating layer over the conductive layer and encapsulant.
12. The method of claim 6 , further including disposing a second semiconductor die over the first semiconductor die.
13. The method of claim 6 , further including:
stacking a plurality of the semiconductor devices; and
electrically connecting the semiconductor devices through the first bumps.
14. The method of claim 6 , further including forming a second bump over the first bump.
15. A method of making a semiconductor device, comprising:
providing a substrate;
forming an interconnect structure over the substrate;
disposing a semiconductor die including contact pads over the substrate with the contact pads oriented away from the substrate;
depositing an encapsulant over the substrate;
removing a first portion of the encapsulant to expose the interconnect structure and semiconductor die; and
forming a conductive layer over a surface of the encapsulant and extending from an exposed portion of the interconnect structure to the semiconductor die.
16. The method of claim 15 , wherein the interconnect structure includes a bump.
17. The method of claim 15 , further including removing the substrate.
18. The method of claim 15 , wherein the substrate includes copper.
19. The method of claim 15 , further including forming an insulating layer over the conductive layer and encapsulant.
20. The method of claim 15 , further including:
stacking a plurality of the semiconductor devices; and
electrically connecting the semiconductor devices through the interconnect structure.
21. The method of claim 15 , further including forming a bump over the interconnect structure.
22. The method of claim 15 , further including:
forming an indentation in the substrate; and
forming the interconnect structure partially within the indentation.