Electronic pressure-sensing device
View Patent ↗An electronic pressure-sensing device 100 comprising a transistor 105 located on a substrate 110 . The device also comprises a linker arm 115 that has a tip 120 which is configured to touch a contact region 125 of the substrate that is near the transistor. The device also comprises a pressure converter 130 that is mechanically coupled to the linker arm. The pressure converter is configured to cause, in response to a pressure change, the tip to impart a force capable of changing an electrical conductivity of the transistor.
1. An electronic pressure-sensing device, comprising:
a transistor located on a substrate;
a linker arm having a tip, said tip configured to touch a contact region of said substrate that is near said transistor; and
a pressure converter mechanically coupled to said linker arm, said pressure converter configured to cause, in response to a pressure change, said tip to impart a force to change an electrical conductivity of said transistor.
2. The device of claim 1 , wherein said tip of said linker arm is located over said substrate.
3. The device of claim 1 , wherein said tip of said linker arm is under said substrate.
4. The device of claim 1 , wherein said tip of said linker arm is located adjacent to said substrate.
5. The device of claim 1 , wherein a side of said tip contacting said substrate has a surface area in a range of about 1 to 2 microns 2 .
6. The device of claim 1 , wherein said tip is a beveled tip.
7. The device of claim 1 , wherein said substrate further includes a strained dielectric layer covering said transistor, said strained dielectric layer configured to impart a tensile force or a compressive force to said transistor.
8. The device of claim 7 , wherein said strained dielectric layer includes one or more of silicon nitride, silicon oxynitride, or silicon oxide.
9. The device of claim 1 , further including a reference transistor located on said substrate, wherein a separation distance between said reference transistor and said transistor is sufficient that said force does not substantially change an electrical conductivity of said reference transistor.
10. The device of claim 9 , wherein said transistor and said reference transistor are separated by a distance that is at least about 5 times greater that the square-root of the area of a surface of said tip that touches said contact region.
11. The device of claim 10 , wherein said area is about 2 microns 2 and said separation distance is about 10 microns.
12. The device of claim 9 , wherein said transistor and said reference transistors are either both pMOS transistors or both nMOS transistors.
13. The device of claim 9 , wherein both of said transistor and said reference transistor are covered with a strained dielectric layer that is configured to impart one of a tensile force or a compressive force to said transistor and to said reference transistor.
14. The device of claim 9 , wherein said transistor is covered with a strained dielectric layer that is configured to impart one of a tensile force or a compressive force to said transistor and to said reference transistor and said reference transistor is covered with an unstrained dielectric layer.
15. The device of claim 1 , wherein said pressure converter is attached to a same side of said substrate that said tip touches.
16. The device of claim 1 , wherein said pressure converter includes a diaphragm and said device is configured as an audio device or a pressure transducer.
17. The device of claim 9 , wherein said transistor and said reference transistor are part of a differential amplifier electrical circuit.
18. A method of measuring pressure changes, comprising:
moving a linker arm coupled to a pressure converter in response to said pressure converter being mechanically vibrated by a pressure change in a medium surrounding said pressure converter, wherein said movement causes a tip of said linker arm to impart a force a contact region of a substrate;
applying a voltage across a transistor located on said substrate and near said contact region; and
recording a first voltage or a first current from said transistor, said first voltage or said first current varying as a function of changes in said imparted force.
19. The method of claim 18 , further including:
applying said voltage to a reference transistor located on said substrate, said reference transistor having a common input node with said transistor, wherein a second voltage or a second current from said reference transistor does not substantially vary in response to said magnitude of said changing imparted force; and
calculating a difference between said first voltage and said second voltage, or, between said first current and said second current, said difference varying as a function of changes in said imparted force.
20. A method of manufacturing an electronic pressure-sensing device, comprising:
forming a transistor on a substrate;
situating a linker arm over said substrate such that a tip of said linker arm can touch a contact region of said substrate near said transistor; and
coupling said linker arm to a pressure converter, said pressure converter configured to cause said tip to impart a force to said contact region in response to a pressure change in a medium surrounding said pressure converter.