Carbon-based interface layer for a memory device and methods of forming the same
View Patent ↗In a first aspect, a memory cell is provided that includes (1) a first conductor; (2) a reversible resistance-switching element formed above the first conductor including (a) a carbon-based resistivity switching material; and (b) a carbon-based interface layer coupled to the carbon-based resistivity switching material; (3) a steering element formed above the first conductor; and (4) a second conductor formed above the reversible resistance-switching element and the steering element. Numerous other aspects are provided.
1. A memory cell comprising:
a first conductor;
a metal-insulator-metal (MIM) stack formed above the first conductor, the MIM stack including:
a bottom electrode;
a first carbon-based interface layer disposed on the bottom electrode;
a carbon-based resistivity switching material comprising carbon nanotubes formed on the first carbon-based interface layer;
a second carbon-based interface layer disposed on the carbon-based resistivity switching material; and
a top electrode disposed on the second carbon-based interface layer;
a steering element formed above the first conductor; and
a second conductor formed above the MIM stack and the steering element.
2. The memory cell of claim 1 , wherein the first carbon-based interface layer and/or the second carbon-based interface layer has an sp 3 bond concentration greater than that of the carbon-based resistivity switching material.
3. The memory cell of claim 1 , wherein the first carbon-based interface layer and/or the second carbon-based interface layer has a density greater than that of the carbon-based resistivity switching material.
4. The memory cell of claim 1 , wherein the first carbon-based interface layer and/or the second carbon-based interface layer comprises nitridized carbon-based material.
5. The memory cell of claim 1 , wherein the first carbon-based interface layer and/or the second carbon-based interface layer has a thickness of about 500 angstroms or less.
6. The memory cell of claim 1 , wherein the first carbon-based interface layer and/or the second carbon-based interface layer comprises amorphous carbon.
7. The memory cell of claim 1 , wherein one or more of the first carbon-based interface layer and/or the second carbon-based interface layer and the carbon-based resistivity switching material comprises one or more of amorphous carbon containing graphene, graphene, and carbon nanotubes.
8. The memory cell of claim 1 wherein the steering element comprises a vertical diode.