Patent Assignment
Reel/Frame 070778/0160
Assignment of Assignor's Interest
Recorded: 2025-04-08
Pages: 9
Assignor
SANDISK TECHNOLOGIES, INC.
Executed: 2025-03-06
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF
Covered Properties
(50)
Junction Diode with Reduced Reverse Current
Memory Cell That Employs a Selectively Grown Reversible Resistance-Switching Element and Methods of Forming the Same
Memory Cell That Employs a Selectively Deposited Reversible Resistance-Switching Element and Methods of Forming the Same
Memory Cell That Employs a Selectively Fabricated Carbon Nano-Tube Reversible Resistance-Switching Element Formed Over a Bottom Conductor and Methods of Forming the Same
Metadata Rebuild in a Flash Memory Controller Following a Loss of Power
Method for Correlated Multiple Pass Programming in Nonvolatile Memory
Nonvolatile Memory with Correlated Multiple Pass Programming
Sidewall Structured Switchable Resistor Cell
Capacitive Discharge Method for Writing to Non-Volatile Memory
Pulse Reset for Non-Volatile Storage
Carbon-Based Interface Layer for a Memory Device and Methods of Forming the Same
Methods of Forming a Reversible Resistance-Switching Metal-Insulator-Metal Structure
Dual Interface Card with Backward and Forward Compatibility
Method of Programming a Nonvolatile Memory Cell by Reverse Biasing a Diode Steering Element to Set a Storage Element
Memory Cell That Includes a Carbon-Based Reversible Resistance Switching Element Compatible with a Steering Element, and Methods of Forming the Same
Nonvolatile Memory with Correlated Multiple Pass Programming
Punch-Through Diode
Three Dimensional Memory System with Page of Data Across Word Lines
Electrode Diffusions in Two-Terminal Non-Volatile Memory Devices
Non-Volatile Memory Arrays Comprising Rail Stacks with a Shared Diode Component Portion for Diodes of Electrically Isolated Pillars
Memory Cell That Employs a Selectively Deposited Reversible Resistance-Switching Element and Methods of Forming the Same
Cross Point Non-Volatile Memory Cell
Dual Interface Card with Backward and Forward Compatibility
Host for Use with Dual Interface Card with Backward and Forward Compatibility
Memory Cell That Employs a Selectively Grown Reversible Resistance-Switching Element and Methods of Forming the Same
Overprovision Capacity in a Data Storage Device
Systems and Methods for Persistent Cache Logging
Memory Cell That Employs a Selectively Grown Reversible Resistance-Switching Element and Methods of Forming the Same
Systems and Methods of Storing Data Associated with Content of a Data Storage Device
Vertical Thin Film Transistors in Non-Volatile Storage Systems
Sense Amplifier Local Feedback to Control Bit Line Voltage
Nonvolatile Memory Adaptive to Host Boot Up Routine
Configuration Parameter Management for Non-Volatile Data Storage
Data Integrity Enhancement to Protect Against Returning Old Versions of Data
Data Integrity Enhancement to Protect Against Returning Old Versions of Data
Voltage Slew Rate Throttling for Reduction of Anomalous Charging Current
Identifying Disk Drives and Processing Data Access Requests
Memory System and Method for Writing Data to a Block of an Erased Page
Vertical Bit Line Non-Volatile Memory Systems And Methods Of Fabrication
Filament Confinement in Reversible Resistance-Switching Memory Elements
Dual Ots Memory Cell Selection Means and Method
Sense Amplifier Local Feedback to Control Bit Line Voltage
Non-Volatile Memory Device Containing Oxygen-Scavenging Material Portions and Method of Making Thereof
Vertical Thin Film Transistors in Non-Volatile Storage Systems
Resistive Memory Device Having Sidewall Spacer Electrode and Method of Making Thereof
Patent:
9,806,256 →
Application:
15/299,919 →
Vertical Bit Line Non-Volatile Memory Systems And Methods Of Fabrication
Resistive Random Access Memory Device Containing Discrete Memory Material Portions and Method of Making Thereof
Patent:
10,121,965 →
Application:
15/692,230 →
Identifying Disk Drives and Processing Data Access Requests
Configuration Parameter Management for Non-Volatile Data Storage
Semiconductor Device Including Control Switches to Reduce Pin Capacitance
Related Assignments
(8)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 29, 2016
From: SANDISK ENTERPRISE IP LLC
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 038295/0225 →
Assignment of Assignor's Interest
Mar 30, 2016
From: SANDISK 3D LLC.
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 038300/0665 →
Corrective Assignment to Correct the Incorrect Listed Patent Number 8853569 to the Correct Patent Number 8883569 Previously Recorded on Reel 038300 Frame 0665. Assignor(S) Hereby Confirms the Assignment.
Apr 25, 2016
From: SANDISK 3D LLC
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 038520/0552 →
Change of Name
May 25, 2016
From: SANDISK TECHNOLOGIES INC
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 038809/0600 →
Change of Name
May 25, 2016
From: SANDISK TECHNOLOGIES INC
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 038807/0850 →
Change of Name
Aug 21, 2020
From: SANDISK IL LTD
To: WESTERN DIGITAL ISRAEL LTD
Reel/Frame 053574/0513 →
Assignment of Assignor's Interest
Oct 24, 2024
From: WESTERN DIGITAL ISRAEL, LTD.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069267/0794 →
Assignment of Assignor's Interest
Dec 31, 2024
From: SANDISK TECHNOLOGIES LLC
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069796/0423 →