Memory module with vertically accessed interposer assemblies

1. A memory module comprising:

a memory board with a first side, a second side and an edge, the edge having a set of electrical contacts;

a first transposer with a first surface and a second surface opposite the first surface;

a first interposer having a first surface and a second surface opposite the first surface;

a first memory device and a second memory device wherein the first surface of the first transposer is attached to the first surface of the memory board, the second surface of the first transposer is attached to the first surface of the first interposer, and the first memory device and the second memory device are attached to the first surface of the first interposer;

a second transposer with a first surface and a second surface opposite the first surface;

a second interposer having a first surface and a second surface opposite the first surface;

a third memory device and a fourth memory device;

a fifth memory device attached to the second surface of the first interposer and a sixth memory device attached to the second surface of the second interposer; and

wherein:

the first surface of the second transposer is attached to the second surface of the memory board, the second surface of the second transposer is attached to the first surface of the second interposer, and the third memory device and the fourth memory device are attached to the first surface of the second interposer;

the first memory device is connected to a first contact of the set of electrical contacts via a first path along the memory board, the first transposer and the first interposer;

the second memory device is connected to a second contact of the set of electrical contacts via a second path along the memory board, the first transposer and the first interposer;

the third memory device is connected to a third contact of the set of electrical contacts via a third path along the memory board, the second transposer and second interposer; and

the fourth memory device is connected to a fourth contact of the set of electrical contacts via a fourth path along the memory board, the second transposer and second interposer.

2. The memory module of claim 1 , wherein the first transposer is between the first and the second memory devices and the second transposer is between the third and fourth memory devices.

3. The memory module of claim 2 further comprising a buffer material between the first memory device and the first surface of the memory board.

4. The memory module of claim 2 , wherein the memory board is a six layer printed circuit board with physical dimensions consistent with JEDEC standards for a DDR2 20 memory module.

5. The memory module of claim 2 , wherein the first contact and the third contact are the same.

6. The memory module of claim 2 , wherein the first and second memory devices and the transposer cover more than 90% of the first surface of the first interposer.

7. The memory module of claim 4 further comprising a seventh memory device attached to the second surface of the first interposer and an eighth memory device attached to the second surface of the second interposer.

8. The memory module of claim 7 , wherein the fifth memory device covers a surface area of the second surface of the first interposer directly opposite a surface area of the first surface of the first interposer covered by the first memory device.

9. The memory module of claim 8 , wherein each memory device is a dynamic random access memory chip.

10. The memory module of claim 8 , wherein each memory device is a flash memory chip.

11. The memory module of claim 1 , wherein the first surface of the memory board includes a heat dissipation layer which is proximate to or touching the first memory device and is configured to remove heat from the first memory device.

12. The memory module of claim 11 , wherein the heat dissipation layer comprises a copper layer.

13. The memory module of claim 1 further comprising one or more registers which enable access to the first, second, third and fourth memory modules.

14. The memory module of claim 1 , wherein the first surface and the second surface of the first transposer each contain an array of electrical contacts arranged in rows and columns.

15. A memory assembly for use with a DIMM comprising:

an interposer having a first surface and a second surface opposite the first surface;

a first memory device and a second memory device attached to the first surface of the interposer;

a third memory device and a fourth memory device attached to the second surface of the interposer; and

a transposer with a first surface and a second surface opposite the first surface, wherein the first surface of the transposer is attached to the first surface of the interposer; and

a set of contact points on the second surface of the transposer;

wherein each of the first, second, third and fourth memory devices are electrically connected to one or more of the set of contact points on the second surface of the transposer by an electrical connection through the interposer and the transposer.

16. The memory assembly of claim 15 wherein the first and second memory devices are electrically connected to identical one or more contact points of the set of contact points.

17. The memory assembly of claim 15 wherein the first and second memory devices are electrically connected to different contact points of the set of contact points.

18. The memory assembly of claim 15 , wherein the transposer is between the first memory device and the second memory device.

19. The memory assembly of claim 16 , wherein the first memory device covers a surface area of the first surface of the interposer corresponding to a surface area of the second surface of the interposer covered by the third memory device wherein and the second memory device covers a surface area of the first surface of the interposer corresponding to a surface area of the second surface of the interposer covered by the fourth memory device.