Method of forming wiring on a plurality of semiconductor devices from a single metal plate, and a semiconductor construction assembly formed by the method

1. A manufacturing method of a semiconductor device, the method comprising:

preparing a metal plate having a plurality of projection electrodes in each of a plurality of semiconductor device formation areas;

providing an adhesive material that projects further than top surfaces of the projection electrodes in an area of each semiconductor device formation area of the metal plate in which the projection electrodes are not formed;

aligning the projection electrodes of each of the semiconductor formation areas to correspond to external connection electrodes of semiconductor constructions, and arranging each semiconductor construction separately on the projection electrodes in the semiconductor device formation areas;

arranging an insulating layer formation sheet on the metal plate, the insulating layer formation sheet having openings that accommodate the semiconductor constructions;

joining the metal plate and the insulating layer formation sheet by heat pressing the metal plate and the insulating layer formation sheet;

patterning the metal plate and forming a plurality of upper layer wirings that connect to at least one of the projection electrodes; and

acquiring a plurality of semiconductor devices which contain at least one semiconductor construction by cutting the insulating layer formation sheet.

2. The manufacturing method of a semiconductor device according to claim 1 , wherein joining the metal plate and the insulating layer formation sheet includes filling gaps between the metal plate and the semiconductor constructions with a material in the insulating layer formation sheet melted by the heat pressing.

3. The manufacturing method of a semiconductor device according to claim 1 , further comprising:

arranging a lower-layer insulating film formation sheet that covers each semiconductor construction and the insulating layer formation sheet, after arranging the insulating layer formation sheet on the metal plate, and before joining the metal plate and the insulating layer formation sheet by heat pressing the metal plate and the insulating layer formation sheet.

4. The manufacturing method of a semiconductor device according to claim 3 , wherein each of the projection electrodes on the metal plate is formed by etching the metal plate.

5. A manufacturing method of a semiconductor device, the method comprising:

preparing a metal plate having a plurality of projection electrodes in each of a plurality of semiconductor device formation areas;

forming a top-surface insulating film formation layer on a surface of the metal plate that is adapted to face semiconductor constructions;

providing an adhesive material for adhering the semiconductor constructions onto the top-surface insulating film formation layer;

aligning the projection electrodes of each of the semiconductor formation areas to correspond to external connection electrodes of the semiconductor constructions, and arranging each semiconductor construction separately on the projection electrodes in the semiconductor device formation areas;

arranging an insulating layer formation sheet on the metal plate, the insulating layer formation sheet having openings that accommodate the semiconductor constructions;

joining the metal plate and the insulating layer formation sheet by heat pressing the metal plate and the insulating layer formation sheet;

patterning the metal plate and forming a plurality of upper layer wirings that connect to at least one of the projection electrodes; and

acquiring a plurality of semiconductor devices which contain at least one semiconductor construction by cutting the insulating layer formation sheet.

6. A manufacturing method of a semiconductor device, the method comprising:

preparing a metal plate having a plurality of projection electrodes in each of a plurality of semiconductor device formation areas;

aligning the projection electrodes of each of the semiconductor formation areas to correspond to external connection electrodes of semiconductor constructions, and arranging each semiconductor construction separately on the projection electrodes in the semiconductor device formation areas;

arranging an insulating layer formation sheet on the metal plate, the insulating layer formation sheet having openings that accommodate each semiconductor construction;

joining the metal plate and the insulating layer formation sheet by heat pressing the metal plate and the insulating layer formation sheet;

patterning the metal plate and forming a plurality of upper layer wirings that connect to at least one of the projection electrodes; and

acquiring a plurality of semiconductor devices which contain at least one semiconductor construction by cutting the insulating layer formation sheet,

wherein the insulating layer formation sheet is arranged such that a top surface of the insulating layer formation sheet is flush with a top surface of each semiconductor construction, and

wherein a thickness of the insulating layer formation sheet is thicker than a thickness of each semiconductor construction by an amount equal to a height of the projection electrodes.

7. The manufacturing method of a semiconductor device according to claim 6 , wherein the insulating layer formation sheet is formed from a plurality of sheets.