Transistor diagnostic circuit

1. A method of forming a diagnostic circuit comprising:

configuring the diagnostic circuit to test a transistor in both a forward biased mode and a reverse biased mode while power is applied to at least one of a source or drain of the transistor from a power source external to the diagnostic circuit wherein the diagnostic circuit determines operation of the transistor in the forward biased and reverse biased modes and wherein the diagnostic circuit is configured to determine an open circuit condition of the transistor while the transistor is operating in the forward biased mode and while the transistor is operating in the reverse biased mode and wherein the diagnostic circuit sets a control signal indicating the open circuit condition of the transistor; and

forming the transistor and the diagnostic circuit on one semiconductor die.

2. The method of claim 1 further including configuring the diagnostic circuit to measure an on-resistance of the transistor and set a state of a control signal in response to the on-resistance increasing to a first value to indicate that the on-resistance is greater than the first value.

3. The method of claim 1 further including configuring the diagnostic circuit to form a first signal that is representative of a drain-to-source voltage of the transistor, to form a second signal that is representative of a drain current of the transistor, and to use the first signal and the second signal to determine if the on-resistance is less than a first value.

4. The method of claim 1 further including configuring the diagnostic circuit to form a signal representing operation of the transistor in at least one of the forward biased mode or the reverse biased mode.

5. The method of claim 1 further including configuring the diagnostic circuit to enable the transistor to conduct current through the transistor while the transistor is operating in the reverse biased mode and to use the current to test the transistor in the reverse biased operating mode.

6. A method of forming a diagnostic circuit comprising:

configuring the diagnostic circuit to test a transistor in both a forward biased mode and a reverse biased mode while power is applied to at least one of a source or drain of the transistor from a power source external to the diagnostic circuit wherein the diagnostic circuit determines operation of the transistor in the forward biased and reverse biased modes;

configuring the diagnostic circuit to test the transistor for a shorted condition of the transistor and to set a control signal indicating the shorted condition; and

forming the transistor and the diagnostic circuit on one semiconductor die.