Electromigration resistant aluminum-based metal interconnect structure
View Patent ↗A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl 3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl 3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl 3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
1. A method of forming a metal interconnect structure comprising:
forming an elemental metal liner layer directly on a top surface of a dielectric material layer;
forming a metal nitride liner layer directly on a top surface of said elemental metal liner layer;
forming a titanium (Ti) liner layer directly on a top surface of said metal nitride liner layer;
forming an aluminum (Al) layer directly on a top surface of said Ti liner layer;
forming a metal nitride cap layer directly on a top surface of said aluminum portion;
patterning said aluminum layer to form an aluminum portion and patterning said Ti liner layer to form a Ti liner portion; and
annealing said Ti liner portion and said aluminum portion, wherein said Ti liner portion reacts with a sub-portion of said aluminum layer portion to form a TiAl 3 liner abutting said metal nitride liner portion and a remaining sub-portion of said aluminum layer portion.
2. The method of claim 1 , further comprising forming a conductive structure in said dielectric material layer, wherein a top surface of said conductive structure is substantially coplanar with a top surface of said dielectric material layer.
3. The method of claim 1 , further comprising:
applying a photosensitive material on said metal nitride cap layer;
lithographically patterning said photosensitive material; and
transferring a pattern in said photosensitive material into said metal nitride cap layer, said aluminum layer, said Ti liner, said metal nitride liner, and said elemental metal liner, wherein a metal nitride cap portion, said aluminum portion, said Ti liner portion, a metal nitride liner portion, and an elemental metal liner portion are formed.
4. The method of claim 3 , wherein said elemental metal liner portion, said metal nitride liner portion, said Ti liner portion, and said aluminum portion have substantially vertically coincident sidewalls after said transfer of said pattern.
5. The method of claim 3 , further comprising:
forming an overlying dielectric material layer which overlies said metal nitride cap; and
forming an opening in said overlying dielectric material layer, wherein a top surface of said metal nitride cap is exposed in said opening.
6. The method of claim 3 , wherein said elemental metal liner consists essentially of Ti or Ta, and wherein said metal nitride liner consists essentially of TiN or TaN, and wherein said metal nitride cap layer consists essentially of TiN or TaN.
7. The method of claim 3 , wherein said elemental metal liner layer has a thickness from about 3 nm to about 30 nm, wherein said metal nitride liner layer has a thickness from about 3 nm to about 60 nm, wherein said TiAl 3 liner has a thickness from about 10 nm to about 90 nm after said annealing, wherein said aluminum portion has a thickness from about 300 nm to about 3,000 nm, and wherein said metal nitride cap layer has a thickness from about 20 nm to about 200 nm.