Variable impedance memory device having simultaneous program and erase, and corresponding methods and circuits
View Patent ↗An integrated circuit may include: access circuits that couple first electrodes of a plurality of programmable metallization cells (PMC) to access paths in parallel, each PMC comprising a solid ion conducting material formed between the first electrode and a second electrode; a plurality of write circuits, each coupled to a different access path, and each coupling the corresponding access path to a first voltage in response to input write data having a first value and to a second voltage in response to the input write data having a second value; and a node setting circuit that maintains second electrodes of the PMCs at a substantially constant third voltage while write circuits couple the access paths to the first or second voltages.
1. An integrated circuit, comprising:
a plurality of programmable metallization cells (PMCs) each comprising a solid ion conducting material formed between a first electrode and a second electrode, the second electrodes being coupled to bit lines;
a bit line decoder circuit that couples bit lines to at least a bit line program voltage or a bit line erase voltage in response to address data; and
a node decoder circuit that couples first electrodes between at least a first voltage and second voltage in response to at least first address data; wherein
each PMC device is erased to at least a first impedance state in response to its first electrode being coupled to the first voltage while its second electrode is coupled to the bit line erase voltage, and programmed to at least a second impedance state in response to its first electrode being coupled to the first voltage while its second electrode is coupled to the bit line program voltage.
2. The integrated circuit of claim 1 , further including:
each PMC being coupled to a bit line by a corresponding access device.
3. The integrated circuit of claim 1 , wherein:
the node decoder circuit couples at least a first group of first electrodes to the first voltage in response to the first address data and a first input write data value having a first value, and couples at least the first group of first electrodes to the second voltage in response to the first address data and the first input write data value having a second value.
4. The integrated circuit of claim 3 , wherein:
the first electrodes further include a second group of first electrodes; and
the node decoder circuit couples the second group of first electrodes to the first voltage in response to the first address data and second input write data value having the first value, and to the second voltage in response to the first address data and the second input write data value having the second value.
5. The integrated circuit of claim 1 , wherein:
the node decoder circuit couples the first electrodes to a third voltage different from the first or second voltages in response to at least second address data.
6. An integrated circuit, comprising:
a plurality of programmable metallization cells (PMCs) each comprising a solid ion conducting material formed between a first electrode and a second electrode, the second electrodes being coupled to bit lines;
a node decoder circuit that couples first electrodes between at least a first voltage and second voltage in response to at least first address data;
a plurality of read circuits, each coupled to second electrodes of the PMCs by at least an access device, each read circuit determining a stored data value of an accessed PMC; and
a plurality of write circuits, each coupled to second electrodes of the PMCs by at least an access device, each write circuit applying at least a program voltage or an erase voltage to an accessed PMC in response to an input write data value, each write circuit being disabled in response to a comparison between a determined stored data value and a corresponding input write data value.
7. The integrated circuit of claim 1 , further including:
a plurality of read verify circuits, each coupled to second electrodes of the PMCs by at least an access device, each read circuit determining a stored data value of an accessed PMC; and
a plurality of write circuits, each coupled to second electrodes of the PMCs by at least an access device, each write circuit applying at least a program voltage or an erase voltage to an accessed PMC in response to an input write data, and re-applying the program voltage or erase voltage in response to determined stored data value being different than the input write data value.
8. The integrated circuit of claim 6 , wherein:
the node decoder circuit couples at least a first group of first electrodes to the first voltage in response to the first address data and a first input write data value having a first value, and couples at least the first group of first electrodes to the second voltage in response to the first address data and the first input write data value having a second value.
9. The integrated circuit of claim 8 , wherein:
the first electrodes further include a second group of first electrodes; and
the node decoder circuit couples the second group of first electrodes to the first voltage in response to the first address data and second input write data value having the first value, and to the second voltage in response to the first address data and the second input write data value having the second value.
10. The integrated circuit of claim 8 , wherein:
the node decoder circuit couples the first electrodes to a third voltage different from the first or second voltages in response to at least second address data.
11. An integrated circuit, comprising:
a plurality of programmable metallization cells (PMCs) each comprising a solid ion conducting material formed between a first electrode and a second electrode, the second electrodes being coupled to bit lines;
a bit line decoder circuit that couples bit lines to at least a bit line program voltage or a bit line erase voltage in response to address data; and
a node decoder circuit that couples first electrodes between at least a first voltage and second voltage in response to at least first address data; wherein
each PMC device is erased to at least a first impedance state in response to its first electrode being coupled to the first voltage while its second electrode is coupled to the bit line erase voltage, and programmed to at least a second impedance state in response to its first electrode being coupled to the second voltage while its second electrode is coupled to the bit line program voltage.
12. The integrated circuit of claim 11 , wherein:
the node decoder circuit couples at least a first group of first electrodes to the first voltage in response to the first address data and a first input write data value having a first value, and couples at least the first group of first electrodes to the second voltage in response to the first address data and the first input write data value having a second value.
13. The integrated circuit of claim 12 , wherein:
the first electrodes further include a second group of first electrodes; and
the node decoder circuit couples the second group of first electrodes to the first voltage in response to the first address data and second input write data value having the first value, and to the second voltage in response to the first address data and the second input write data value having the second value.
14. The integrated circuit of claim 11 , wherein:
the node decoder circuit couples the first electrodes to a third voltage different from the first or second voltages in response to at least second address data.
15. The integrated circuit of claim 11 , further including:
a plurality of read verify circuits, each coupled to second electrodes of the PMCs by at least an access device, each read circuit determining a stored data value of an accessed PMC; and
a plurality of write circuits, each coupled to second electrodes of the PMCs by at least an access device, each write circuit applying at least a program voltage or an erase voltage to an accessed PMC in response to an input write data, and re-applying the program voltage or erase voltage in response to determined stored data value being different than the input write data value.