Device under bonding pad using single metallization
View Patent ↗An integrated circuit device comprising an improved bonding pad structure. The device has a semiconductor substrate. A plurality of active MOS devices are formed on the semiconductor substrate. The device has an interlayer dielectric layer overlying the plurality of active MOS devices and at least one single metal bonding pad formed on the interlayer dielectric layer and directly over at least one of the active devices. At least four edge regions are formed on a square shape of the at least one single metal bonding pad. An angled cut region is formed on each of the four edge regions. The device has a buffer metal layer free region located between the plurality of active MOS devices and the at least one single metal bonding pad. The buffer metal layer free region does not have a buffer metal layer in the interlayer dielectric layer.
1. An integrated circuit device comprising:
a semiconductor substrate;
a plurality of active MOS devices formed on the semiconductor substrate;
an interlayer dielectric layer overlying the plurality of active MOS devices;
at least six patterned metal layers formed within the interlayer dielectric layer;
at least one single metal bonding pad formed in a top patterned metal layer and located directly over at least one of the active MOS devices, the metal bonding pad being coupled to one or more patterned metal layers thereunder; and
a passivation layer having an opening formed over the at least one single metal bonding pad; and
a buffer-metal-layer free region disposed between the plurality of active MOS devices and the at least one single metal bonding pad, the buffer-metal-layer free region being free of a buffer-metal-layer within the interlayer dielectric layer cracks directly below a bonding area; and
wherein the interlayer dielectric layer is substantially free of.
2. The device of claim 1 wherein the single metal bonding pad is characterized by a square shape having four edges, each of the edges having a cut corner region.
3. The device of claim 2 wherein the cut corner region is rounded.
4. The device of claim 3 wherein the cut corner region is angled.
5. The device of claim 1 wherein the single metal bonding pad has a length of 50 microns and less.
6. The device of claim 1 wherein the single metal bonding pad is connected to the bond wire using at least a power ranging from about 90 mA to about 100 mA, a force ranging from about 10 g to about 20 g, and for a time ranging from about 10 ms to about 15 ms.
7. The device of claim 1 wherein the at least one single metal bonding pad has a thickness of 0.8 micron and less.
8. The device of claim 1 wherein the at least one single metal bonding pad comprises aluminum bearing material.
9. The device of claim 1 wherein the at least one single metal bonding pad is characterized by a square shape having four cut corner regions, the single metal bonding pad comprising substantially 95% of a perfect square region.
10. The device of claim 1 wherein the interlayer dielectric layer being free from the buffer metal layer within the entirety of the interlayer dielectric layer allows for routing of at least one additional metal line within the interlayer dielectric layer.
11. An integrated circuit device comprising:
a semiconductor substrate;
a plurality of active MOS devices formed on the semiconductor substrate;
an interlayer dielectric layer overlying the plurality of active MOS devices;
at least one single metal bonding pad formed on the interlayer dielectric layer and directly over at least one of the active MOS devices, the metal bonding pad being coupled to one or more patterned metal layers thereunder;
at least four edge regions formed on a square shape of the at least one single metal bonding pad;
an angled cut region formed on each of the four edge regions, the angled cut region being within a periphery of the square shape of the at least one single metal bonding pad;
a passivation layer having an opening formed over the at least one single metal bonding pad; and
a buffer-metal-layer free region between the plurality of active MOS devices and the at least one single metal bonding pad, the buffer-metal-layer free region being free of a buffer-metal-layer within the interlayer dielectric layer directly below a bonding area of the bonding pad; and
two or more wiring layers directly under the bonding area.
12. The device of claim 11 wherein the single metal bonding pad has a length of 50 microns and less.
13. The device of claim 11 wherein the single metal bonding pad is further connected to a bond wire while preventing a crack in the interlayer dielectric layer.
14. The device of claim 11 wherein the single metal bonding pad is connected to the bond wire using at least a power ranging from about 90 mA to about 100 mA, a force ranging from about 10 g to about 20 g, and for a time ranging from about 10 ms to about 15 ms..
15. The device of claim 11 wherein the at least one single metal bonding pad has a thickness of 0.8 micron and less.
16. The device of claim 11 wherein the at least one single metal bonding pad comprises aluminum bearing material.
17. An integrated circuit device comprising:
a semiconductor substrate;
a plurality of active MOS devices formed on the semiconductor substrate:
an interlayer dielectric layer overlying the plurality of active MOS devices;
at least three patterned metal layers formed within the interlayer dielectric layer;
at least one single metal bonding pad formed on the interlayer dielectric layer and directly over the plurality of active devices, the metal bonding pad being coupled to one or more patterned metal layers thereunder;
a passivation layer having an opening formed over the at least single metal bonding pad; and
a buffer-metal-layer free region between the plurality of active MOS devices and the at least one single metal bonding pad, the buffer-metal-layer free region being free of a buffer-metal-layer within the interlayer dielectric layer directly below a bonding area; and
two or more wiring layers directly under the at least one single metal bonding pad.
18. An integrated circuit device comprising:
a semiconductor substrate;
a plurality of active MOS devices formed on the semiconductor substrate;
an interlayer dielectric layer overlying the plurality of active MOS devices;
at least three patterned metal layers formed within the interlayer dielectric layer;
at least one single metal bonding pad formed on the interlayer dielectric layer and directly over at least one of the active devices, the metal bonding pad being coupled to one or more patterned metal layers thereunder; and
a passivation layer having an opening formed over the at least single metal bonding pad;
wherein the interlayer dielectric layer is substantially free of a buffer-metal-layer directly below a bonding area of the metal bonding pad; and
an interconnect layer disposed in a patterned metal layer immediately under the at least one single metal bonding pad.