Copper interconnection structure and method for forming copper interconnections

1. A copper interconnection structure comprising:

an insulating layer;

an interconnection body including copper in an opening provided on the insulating layer; and

a diffusion barrier layer formed between the insulating layer and the interconnection body, wherein the diffusion barrier layer comprises an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2,

wherein the copper interconnection structure further comprises a second oxide layer including manganese formed on an upper surface of the interconnection body, wherein the compositional ratio of oxygen to manganese in the second oxide layer (y 1 /x 1 ) is greater than the compositional ratio of oxygen to manganese in the diffusion barrier layer (y/x).

2. The copper interconnection structure of claim 1 , wherein the compositional ratio of oxygen to manganese in the diffusion barrier layer (y/x) comprises 1.5, 1.3, or 1.

3. The copper interconnection structure of claim 1 , wherein the compositional ratio of oxygen to manganese in the second oxide layer (y 1 /x 1 ) is more than 1 and less than 2.

4. The copper interconnection structure of claim 3 , wherein each of said diffusion barrier layer and second oxide layer further comprises a metal element selected from the group consisting of silicon, ruthenium and hafnium.

5. The copper interconnection structure of claim 4 , wherein a total amount of metal element in the second oxide layer is smaller than the total amount of metal element in the diffusion barrier layer.

6. A copper interconnection structure comprising:

an insulating layer;

an interconnection body including copper in an opening provided on the insulating layer; and

a diffusion barrier layer formed between the insulating layer and the interconnection body, wherein the diffusion barrier layer comprises:

a first layer comprising a metal element other than manganese, wherein the first layer is formed on an inner surface of the opening facing the insulating layer, and

a first oxide layer including manganese formed on the first layer having a compositional ratio of oxygen to manganese (y/x) less than 2,

wherein the copper interconnection structure further comprises a second oxide layer including manganese formed on an upper surface of the interconnection body, wherein the compositional ratio of oxygen to manganese in the second oxide layer (y 1 /x 1 ) is greater than the compositional ratio of oxygen to manganese in the first oxide layer (y/x).

7. The copper interconnection structure of claim 6 , wherein the first layer is an oxide layer or a nitride layer of the metal element.

8. The copper interconnection structure of claim 6 , wherein an enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for copper.

9. The copper interconnection structure of claim 6 , wherein an enthalpy of oxide formation for the metal element is lower than the enthalpy of oxide formation for silicon.

10. The copper interconnection structure of claim 6 , wherein the metal element comprises tantalum or titanium.

11. The copper interconnection structure of claim 6 , wherein the compositional ratio of oxygen to manganese in the first oxide layer (y/x) comprises 1.5, 1.3, or 1.

12. The copper interconnection structure of claim 6 , wherein the compositional ratio of oxygen to manganese in the second oxide layer (y 1 /x 1 ) is more than 1 and less than 2.

13. The copper interconnection structure of claim 12 , wherein each of said first and second oxide layers further comprises a metal element selected from the group consisting of silicon, ruthenium and hafnium.

14. The copper interconnection structure of claim 13 , wherein a total amount of metal element in the second oxide layer is smaller than the total amount of metal element in the first oxide layer.