Substrate structure with die embedded inside and dual build-up layers over both side surfaces and method of the same

1. A structure of a semiconductor device package, comprising:

a first substrate with a die metal pad and an opening hole area, a first wiring circuit on a top surface of said first substrate and a second wiring circuit on a bottom surface of said first substrate;

a die disposed on said die metal pad and said opening hole area;

a second substrate with a die opening window for receiving said die, a third wiring circuit on top surface of said second substrate and a fourth wiring circuit on bottom surface of said second substrate;

a metal layer embedded into said opening hole area of said first substrate and contacted between the backside of said die and said second wiring circuit of said first substrate; and

an adhesive material filled into the gap between back side of said die and top surface of said first substrate except said opening hole area; and between the side wall of said die and the side wall of said die opening window and the bottom side of said second substrate.

2. The structure of claim 1 , further comprising conductive through holes formed by passing through said first substrate and/or said second substrate to connect said first, second, third and fourth wiring circuits.

3. The structure of claim 1 , further comprising a first dielectric layer formed on said die and said second substrate, wherein said first dielectric layer has first openings for via formed therein to connect die metal contact (I/O) pad of said die and said first wiring circuit, and redistributed metal layers formed on said first dielectric layer to connect said die metal contact (I/O) pad through via.

4. The structure of claim 3 , further comprising a second dielectric layer formed on said first dielectric layer and said redistributed metal layers, wherein said second dielectric layer has second openings for under bump metallurgy formed therein to connect said redistributed metal layers, and solder metal pads formed on said under bump metallurgy.

5. The structure of claim 4 , further comprising a third dielectric layer formed under bottom side of said first substrate and said fourth wiring circuit, wherein said third dielectric layer has third openings for under bump metallurgy formed therein to connect said fourth wiring circuit, and solder metal pads formed on said under bump metallurgy.

6. The structure of claim 5 , further comprising conductive bumps coupled to said solder metal pads.

7. The structure of claim 4 , further comprising plurality of CSP, WL-CSP, BGA, flip chip and passive components coupled to said solder metal pads through conductive bumps.

8. The structure of claim 1 , further comprising metal on the sidewall and edge corner of said die opening window of second substrate.

9. The structure of claim 1 , further comprising lens disposed on said die and said second substrate for lighting package application;

wherein the die includes a light emitting element and a solar cell (PV).

10. The structure of claim 1 , wherein the material of said first and second substrate includes epoxy type FR5 or FR4.

11. The structure of claim 1 , wherein the material of said first and second substrate includes BT, silicon, PCB (print circuit board) material, glass, ceramic or alloy metal.

12. The structure of claim 1 , further comprising second dice embedded inside said second substrate stacking on the first substrate with said first dice embedded inside.

13. The structure of claim 1 , wherein said adhesive material includes elastic core paste material to act as stress buffer.

14. The structure of claim 1 , further comprising an Au or Au/Ag layer formed on a bottom surface of said die.

15. The structure of claim 1 , where said metal layer includes E-plating Cu or Cu/Ni/Au metal, which formed on the sputtering and E-plating metal; wherein the sputtering metal includes Cu or Ti/Cu.