IP Library Granted Patent US 7,951,311
Granted Patent B2
US 7,951,311 · App. 12/604,468 · Granted May 31, 2011

Non-lead resistor composition

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Quick Facts
Patent No.
US 7,951,311
App. No.
12/604,468
Granted
May 31, 2011
Kind
B2
Abstract

A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li 2 RuO 3 of diameter between 0.5 and 5 microns and a lead-free frit. The particles have had the lithium at or near primarily the surface of the particle at least partially exchanged for atoms of other metals.

Claims (10)

1. A method of preparing a Li 2 RuO 3 composition a comprising:

(a) providing Li 2 RuO 3 particles having an average particle diameter between about 0.5 and about 5 microns; and

(b) contacting the Li 2 RuO 3 particles with a solution comprising ions prepared from one or more of the elements selected from the group consisting of Al, Ga, K, Ca, Mn, Fe, Mg, Na, H, Cr, Co, Ni, V, Cu, Zn, and Ti.

2. A method according to claim 1 wherein the Li 2 RuO 3 particles are milled to an average particle diameter between about 0.5 and about 5 microns prior to being contacted with the solution of ions, or are milled to an average particle diameter between about 0.5 and about 5 microns while being contacted with the solution of ions.

3. A method according to claim 1 wherein the Li 2 RuO 3 particles are milled to an average particle diameter between about 0.5 and about 5 microns prior to being contacted with the solution of ions.

4. A method according to claim 1 wherein contacting the Li 2 RuO 3 particles with the solution comprises removing about 25 mole % to about 60 mole % of the Li ions from the Li 2 RuO 3 particles.

5. A method according to claim 1 further comprising analyzing the concentration of Li ions, or the concentration of the ions prepared from the selected element(s), to monitor the progress of the preparation of the Li 2 RuO 3 composition.

6. A method according to claim 1 further comprising subsequently admixing the prepared Li 2 RuO 3 particles with glass material, conductive material and an organic medium to form a mixture.

7. A method according to claim 6 further comprising fabricating a resistor from the mixture.

8. A method according to claim 7 further comprising fabricating an electronic device from the resistor.

Assignments (3)
CHANGE OF NAME Recorded Mar 20, 2025
From: DU PONT CHINA LIMITED
To: CELANESE MERCURY HOLDINGS INC.
Reel/Frame 070567/0231 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2022
From: DUPONT ELECTRONICS, INC.
To: DU PONT CHINA LIMITED
Reel/Frame 062173/0299 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2019
From: E. I. DU PONT DE NEMOURS AND COMPANY
To: DUPONT ELECTRONICS, INC.
Reel/Frame 049583/0269 →