Hybrid bonding interface for 3-dimensional chip integration
View Patent ↗Each of a first substrate and a second substrate includes a surface having a diffusion resistant dielectric material such as silicon nitride. Recessed regions are formed in the diffusion resistant dielectric material and filled with a bondable dielectric material. The patterns of the metal pads and bondable dielectric material portions in the first and second substrates can have a mirror symmetry. The first and second substrates are brought into physical contact and bonded employing contacts between metal pads and contacts between the bondable dielectric material portions. Through-substrate-via (TSV) structures are formed through bonded dielectric material portions. The interface between each pair of bonded dielectric material portions located around a TSV structure is encapsulated by two diffusion resistant dielectric material layers so that diffusion of metal at a bonding interface is contained within each pair of bonded dielectric material portions.
1. A bonded structure comprising:
a first substrate including a first diffusion resistant dielectric material layer and a first bondable dielectric material portion, wherein said first bondable dielectric material portion is embedded in said first diffusion resistant dielectric material layer;
a second substrate including a second diffusion resistant dielectric material layer and a second bondable dielectric material portion, wherein said second bondable dielectric material portion is embedded in said second diffusion resistant dielectric material layer and said first and second bondable dielectric material portions are bonded to form a bonded dielectric material portion; and
a through-substrate-via (TSV) structure extending through said first substrate and said second substrate, wherein said bonded dielectric material portion laterally surrounds a portion of said TSV structure and is encapsulated by said first and second diffusion resistant dielectric material layers and said TSV structure.
2. The bonded structure of claim 1 , wherein a surface at which said first and second bondable dielectric material portions are bonded is coplanar with an interface between said first and second diffusion resistant dielectric material layers.
3. The bonded structure of claim 1 , wherein said first diffusion resistant dielectric material layer laterally surrounds a second portion of said TSV structure and said second diffusion resistant dielectric material layer laterally surrounds a third portion of said TSV structure.
4. The bonded structure of claim 3 , wherein said second portion of said TSV structure is vertically spaced from said third portion of said TSV structure by said portion of said TSV structure.
5. The bonded structure of claim 1 , wherein said first substrate has a first end surface located on an opposite side of said first diffusion resistant dielectric material layer, said second substrate has a second end surface located on an opposite side of said second diffusion resistant dielectric material layer, and said TSV structure extends from said first end surface to said second end surface.
6. The bonded structure of claim 1 , wherein said TSV structure comprises a through-substrate-via (TSV) liner and a through-substrate-via (TSV) fill portion, wherein said TSV liner comprises an elemental metal, an intermetallic alloy, a conductive metal nitride, a conductive metal carbide, or a combination thereof, and said TSV fill portion comprises an elemental metal or an intermetallic alloy.
7. The bonded structure of claim 6 , wherein said TSV fill portion comprises an electroplatable material or an electroless-platable material.
8. The bonded structure of claim 1 , further comprising:
a first metal pad embedded in said first diffusion resistant dielectric material layer; and
a second metal pad embedded in said second diffusion resistant dielectric material layer and bonded to said first metal pad.
9. The bonded structure of claim 8 , wherein an interface between said first metal pad and said second metal pad is coplanar with an interface between said first diffusion resistant dielectric material layer and said second diffusion resistant dielectric material layer.
10. The bonded structure of claim 1 , wherein said first and second bondable dielectric material portions are portions of silicon oxide and said first and second diffusion resistant dielectric material layers are layers of silicon nitride.
11. The bonded structure of claim 1 , wherein each of said first and second substrates includes a semiconductor substrate and at least one semiconductor device located thereupon.