Method for reworking antireflective coating over semiconductor substrate

1. A method of reworking an ARC layer, comprising the steps of:

providing a semiconductor substrate having a material layer and a hardmask layer on the material layer;

forming an organic solvent soluble layer on the hardmask layer;

forming a planarization layer on the organic solvent soluble layer;

forming an ARC layer on the planarization layer;

forming a pattern in the ARC layer; and

removing the organic solvent soluble layer, the ARC layer and the planarization layer with an organic solvent.

2. The method of claim 1 , wherein the material layer is an organic dielectric, a metal, a ceramic, or a semiconductor.

3. The method of claim 1 , wherein the ARC layer is a silicon ARC layer.

4. The method of claim 1 , wherein the organic solvent soluble layer comprises polysulfone, polyarylsulfone, polyethersulfone, polyimide, or polyarylether.

5. The method of claim 4 , wherein the thickness of the organic solvent soluble layer is in the range from about 20 nm to about 100 nm.

6. The method of claim 1 , wherein the organic solvent is selected from the group consisting of cyclopentanone, cyclohexanone, γ-butyrolactone, N-methyl-2-pyrrolidone (NMP), a mixture of γ-butyrolactone (GBL) and N-butyl acetate (NBA), and a combination of two or more of the foregoing solvents.

7. The method of claim 1 , wherein forming the pattern in the ARC layer comprises:

forming a photoresist layer on the ARC layer;

forming a resist pattern in the photoresist layer; and

forming a pattern in the ARC layer by using the photoresist layer in which the resist pattern is formed as a mask.

8. The method of claim 7 , wherein forming the resist pattern in the photoresist layer comprises exposing the photoresist layer with an imaging radiation.

9. The method of claim 8 , wherein the organic solvent soluble layer has a refractive index (n) in the range from about 1.6 to about 1.8 and an absorption parameter (k) in the range from about 0.2 to about 0.5 at the wavelength of the imaging radiation.

10. A method of forming a patterned material structure on a substrate, comprising the steps of:

providing a substrate having a material layer;

forming a planarization layer on the material layer;

forming a first organic solvent soluble layer on the planarization layer;

forming a first ARC layer on the first organic solvent soluble layer;

forming a first pattern in the first ARC layer;

removing the first organic solvent soluble layer and the first ARC layer with an organic solvent while leaving the planarization layer unremoved;

forming a second organic solvent soluble layer on the planarization layer;

forming a second ARC layer on the second organic solvent soluble layer;

forming a second pattern in the second ARC layer; and

transferring the second pattern to the material layer.

11. The method of claim 10 , further comprising:

after providing the substrate and before forming the planarization layer, forming a hardmask layer on the material layer, wherein the hardmask layer is between the material layer and the planarization layer.

12. The method of claim 10 , further comprising:

after forming the planarization layer and before forming the first organic solvent soluble layer, forming a hardmask layer on the planarization layer, wherein the hardmask layer is between the planarization layer and the organic solvent soluble layer.

13. A method of forming a patterned material structure on a substrate, comprising the steps of:

providing a substrate having a material layer and a hardmask layer on the material layer;

forming a first organic solvent soluble layer on the hardmask layer;

forming a first planarization layer on the first organic solvent soluble layer;

forming a first ARC layer on the first planarization layer;

forming a first pattern in the first ARC layer;

removing the first organic solvent soluble layer, the first ARC layer and the first planarization layer with an organic solvent leaving the hardmask layer unremoved;

forming a second organic solvent soluble layer on the hardmask layer;

forming a second planarization layer on the second organic solvent soluble layer;

forming a second ARC layer on the second planarization layer;

forming a second pattern in the second ARC layer; and

transferring the second pattern to the material layer.