Temperature detector in an integrated circuit
View Patent ↗A temperature detector in an integrated circuit comprises a temperature-dependent voltage generator, a ring oscillator, a timer and a clock-driven recorder. The temperature-dependent voltage generator is configured to generate at least one temperature-dependent voltage. The ring oscillator is configured to generate a clock signal, which is affected by one of the at least one temperature-dependent voltage. The timer is configured to generate a time-out signal, which is affected by one of the temperature-dependent voltage. The clock-driven recorder has a clock input terminal in response to the clock signal and time-out signal.
1. A temperature detector comprising:
a temperature-dependent voltage generator including:
a primary forward-biased diode providing a temperature-dependent voltage;
a primary resistor connected between the primary forward-biased diode and a reference node biased to a temperature-independent voltage to produce a primary current;
a secondary forward-biased diode;
a secondary resistor connected between the secondary forward-biased diode and an intermediate node;
a current mirror connected to the intermediate node, the current mirror replicating the primary current through the secondary resistor to amplify the temperature-dependent voltage;
circuitry configured to generate at least one buffered temperature-dependent voltage from the amplified temperature-dependent voltage;
a ring oscillator configured to generate a clock signal, wherein a clock rate of the clock signal is affected by the at least one buffered temperature-dependent voltage;
a timer configured to generate a time-out signal, wherein the time-out signal is affected by the at least one buffered temperature-dependent voltage; and
a clock driven recorder having a clock input, wherein the clock input is in response to the clock signal and time-out signal, and the clock-driven recorder is used to estimate a temperature reading.
2. A temperature-dependent charge pump comprising:
a temperature-dependent voltage generator including:
a primary forward-biased diode providing a temperature-dependent voltage;
a primary resistor connected between the primary forward-biased diode and a reference node biased to a temperature-independent voltage to produce a primary current;
a secondary forward-biased diode;
a secondary resistor connected between the secondary forward-biased diode and an intermediate node;
a current mirror connected to the intermediate node, the current mirror replicating the primary current through the secondary resistor to amplify the temperature-dependent voltage;
circuitry configured to generate at least one buffered temperature-dependent voltage from the amplified temperature-dependent voltage;
a ring oscillator configured to generate a clock signal, wherein a clock rate of the clock signal is affected by the at least one buffered temperature-dependent voltage; and
a charge pump providing a temperature-dependent output in response to the clock signal.
3. The temperature-dependent charge pump of claim 2 , wherein a voltage of the temperature-dependent output increases with increased temperature.
4. The temperature-dependent charge pump of claim 2 , wherein a voltage of the temperature-dependent output decreases with decreased temperature.
5. The temperature-dependent charge pump of claim 2 , wherein a secondary resistor value of the secondary resistor is larger than a primary resistor value of the primary resistor, the primary forward-biased diode is an emitter-base diode of a primary bipolar transistor, a collector-base diode of the primary bipolar transistor is shunted, the secondary forward-biased diode is an emitter-based diode of a secondary bipolar transistor, and the collector-base diode of the secondary bipolar transistor is shunted.
6. The temperature detector of claim 1 , wherein a secondary resistor value of the secondary resistor is larger than a primary resistor value of the primary resistor.
7. The temperature detector of claim 1 , wherein the primary forward-biased diode is an emitter-base diode of a primary bipolar transistor, a collector-base diode of the primary bipolar transistor is shunted, the secondary forward-biased diode is an emitter-based diode of a secondary bipolar transistor, and the collector-base diode of the secondary bipolar transistor is shunted.
8. The temperature detector of claim 1 , wherein a frequency of the ring oscillator increases with increased temperature, a duration between the time-out signal and a subsequent time out signal increases with increased temperature, and the clock driven recorder estimates a temperature reading with more precision with increased temperature.
9. The temperature detector of claim 1 , wherein the clock-driven recorder is a shift register.
10. The temperature detector of claim 1 , wherein the clock-driven recorder is a counter.
11. The temperature detector of claim 1 , further comprising a look-up table for use in decoding a content of the clock-driven recorder.
12. A memory comprising:
a plurality of memory cells;
a memory controller providing a refresh signal to maintain a content of the memory cells;
and a temperature detector according to claim 1 , wherein the temperature detector is used to determine a rate at which the memory controller provides refresh signals.
13. The memory of claim 12 , wherein the memory is a random access memory.
14. The memory of claim 12 , wherein the memory is a non-volatile memory.
15. The memory of claim 12 , wherein the clock-driven recorder is a shift register.
16. The memory of claim 12 , wherein the clock-driven recorder is a counter.
17. The memory of claim 12 , further comprising a look-up table for use in decoding a content of the clock-driven recorder.
18. A computer comprising:
a one or more computational units in communication with each other;
a temperature-dependent voltage generator including;
a primary forward-biased diode providing a temperature-dependent voltage;
a primary resistor connected between the primary forward-biased diode and a reference node biased to a temperature-independent voltage to produce a primary current;
a secondary forward-biased diode;
a secondary resistor connected between the secondary forward-biased diode and an intermediate node;
a current mirror connected to the intermediate node, the current mirror replicating the primary current through the secondary resistor to amplify the temperature-dependent voltage;
circuitry configured to generate an at least one temperature-dependent voltage from the amplified temperature-dependent voltage; and
a ring oscillator configured to generate a clock signal, wherein a clock rate of the clock signal is affected by the at least one buffered temperature-dependent voltage, and the clock signal is used to sequence one or more computers.
19. The computer of claim 18 , wherein the clock rate decreases with increased temperature.
20. The computer of claim 18 , wherein the computer is in an integrated circuit.