Bias generator providing for low power, self-biased delay element and delay line
View Patent ↗An improved bias generator incorporates a reference voltage and/or a reference current into the generation of bias voltages. In some cases, the output of a biased delay element has a constant voltage swing. A delay line of such constant output voltage swing delay elements may be shown to provide reduced power consumption compared to some known self-biased delay lines. Furthermore, in other cases, providing the reference current to a novel bias generator allows a delay line of delay elements biased by such a novel bias generator to show reduced sensitivity to operating conditions, reduced sensitivity to variation in process parameters and improved signal quality, thereby providing more robust operation.
1. A bias generator for biasing delay elements in a delay line employing one or more delay elements, said bias generator comprising:
a bias generator variable resistance load element, said bias generator variable resistance load element connected between a power supply voltage and a given node;
a voltage-controlled current source for generating a reference current, said voltage-controlled current source formed of a reference current generator supplying said reference current to a differential pair of field effect transistors (FETs), where division of said reference current between said pair of FETs is based on a reference voltage on a first branch and a control voltage on a second branch; and
a first current mirror formed of a first side and a second side, said first side connected to said voltage-controlled current source so that current in said first side and current in said second side are established based on said division of said reference current.
2. The bias generator of claim 1 further comprising an intermediate FET, having a drain connected to said given node and a gate connected to said power supply voltage, configured so that a current through intermediate FET includes said current in said second side of said current mirror.
3. The bias generator of claim 1 wherein said bias generator variable resistance load element is formed as a current mirror.
4. The bias generator of claim 1 wherein said reference current generator is configured to generate said reference current such that said reference current is invariant in response to variations in operating conditions and variations in process parameters.
5. The bias generator of claim 1 wherein said reference current generator is configured to generate said reference current such that said reference current has a predetermined dependence on operating conditions.
6. The bias generator of claim 5 wherein said operating conditions include an ambient temperature.
7. The bias generator of claim 5 wherein said operating conditions include a level of said power supply voltage.
8. The bias generator of claim 1 wherein said reference current generator is configured to generate said reference current such that said reference current has a predetermined dependence on process parameters.
9. At a bias generator, a method of controlling delay in delay elements in a delay line employing one or more delay elements, said method comprising:
generating a reference current;
supplying said reference current to a differential pair of field effect transistors (FETs), said pair of FETs including a first FET and a second FET, such that a first portion of said reference current flows through said first FET and a second portion of said reference current flows through said second FET;
applying a reference voltage to a gate of said first FET;
applying a control voltage to a gate of said second FET; and
receiving, at a first side of a first current mirror formed of said first side and a second side, said second portion of said reference current.
10. The method of claim 9 wherein said generating said reference current is invariant in response to variations in operating conditions and variations in process parameters.
11. The method of claim 9 wherein said generating said reference current comprises basing said generating on a predetermined dependence on operating conditions.
12. The method of claim 11 wherein said operating conditions include an ambient temperature.
13. The method of claim 11 wherein said operating conditions include a level of said power supply voltage.
14. The method of claim 9 wherein said generating said reference current comprises basing said generating on a predetermined dependence on process parameters.