Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film
View Patent ↗Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.
1. A sintered compact of composite oxide comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, and wherein resistivity of the sintered compact is 0.2 mΩcm or less and wherein said sintered compact has a relative density of at least 99.9%.
2. A method of producing a film of composite oxide, wherein the sintered compact of composite oxide according to claim 1 is sputtered to produce an amorphous film having the same composition.
3. A method of producing a film of composite oxide according to claim 2 , wherein, after producing the amorphous film, the film is crystallized by annealing at a temperature of 260° C. or lower.
4. A method according to claim 3 , wherein a crystalline film of composite oxide is formed by said annealing step and comprises indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
5. The method according to claim 4 , wherein resistivity of the crystalline film is 0.4 mΩcm or less.
6. A sintered compact of composite oxide comprising indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen, and wherein resistivity of the sintered compact is 0.2 mΩcm or less.
7. A method of producing a film of composite oxide, comprising the step of sputtering a sintered compact of composite oxide to produce an amorphous film having the same composition as the sintered compact, wherein the sintered compact of composite oxide comprises indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen, and wherein resistivity of the sintered compact is 0.2 mΩcm or less.
8. A method of producing a film of composite oxide according to claim 7 , wherein, after producing the amorphous film of composite oxide, the amorphous film is crystallized by annealing at a temperature of 260° C. or lower.
9. A method according to claim 8 , wherein a crystalline film of composite oxide formed by the annealing step comprises indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen.
10. The method according to claim 9 , wherein resistivity of the crystalline film is 0.4 mΩcm or less.