Substrate and manufacturing method therefor
View Patent ↗A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
1. A substrate having, on a base material, a barrier film consisting of a single layer combining both a barrier function and a catalytic function, the barrier film is a barrier film for preventing copper diffusion comprising one or more metal elements selected from molybdenum and niobium, a metal element having a catalytic function in electroless plating, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from molybdenum and niobium, wherein the barrier film for preventing copper diffusion contains the metal element having a catalytic function in electroless plating in the amount of 10 to 30 at % and the one or more metal elements selected from molybdenum and niobium in the amount of 60 to 75 at %, with the remainder being nitrogen.
2. The substrate according to claim 1 , wherein the metal element having a catalytic function in electroless plating is one or more selected from platinum, gold, silver and palladium.
3. A substrate according to claim 1 , having a copper seed layer formed by electroless copper plating on the barrier film for preventing copper diffusion using the metal element having a catalytic function as a catalyst.
4. A substrate according to claim 1 , having a copper seed layer formed by electroless copper plating on the barrier film for preventing copper diffusion using the metal element having a catalytic function as a catalyst, and also having damascene copper wiring formed on the copper seed layer.
5. A semiconductor wafer using the substrate according to claim 4 .
6. The substrate according to claim 1 , wherein palladium is contained in the barrier film.
7. The substrate according to claim 1 , wherein platinum is contained in the barrier film.
8. The substrate according to claim 1 , wherein molybdenum and gold are contained in the barrier film.