IP Library Granted Patent US 8,283,051
Granted Patent B2
US 8,283,051 · App. 12/737,399 · Granted Oct 9, 2012

Plated product having copper thin film formed thereon by electroless plating

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Quick Facts
Patent No.
US 8,283,051
App. No.
12/737,399
Granted
Oct 9, 2012
Kind
B2
Abstract

A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.

Claims (5)

1. A plated product comprising a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion comprising metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of atoms contained in the alloy barrier thin film; wherein metal B is tungsten or molybdenum and metal A is at least one metal selected from a group consisting of nickel, cobalt and tin; wherein the alloy barrier thin film consists of metal A and metal B; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher, wherein the copper thin film formed by electroless plating has a thickness of no more than 10 nm and a resistivity of no more than 10 μΩ·cm.

2. The plated product according to claim 1 , wherein the copper thin film formed by electroless plating does not have any holes of 10 nm or larger in diameter.

3. The plated product according to claim 1 , wherein metal B is tungsten or molybdenum and metal A is nickel or cobalt.

4. The plated product according to claim 1 , wherein metal B is tungsten and metal A is nickel or cobalt.

5. The plated product according to claim 1 , wherein metal B is molybdenum and metal A is nickel.

Assignments (3)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
CHANGE OF ADDRESS Recorded Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2011
From: ITO, JUNICHI; YABE, ATSUSHI; SEKIGUCHI, JUNNOSUKE; IMORI, TORU; YAMAKOSHI, YASUHIRO; SENDA, SHINICHIRO
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 025966/0587 →