Integrated circuit system with stress redistribution layer and method of manufacture thereof
View Patent ↗A method of manufacture of an integrated circuit system includes: providing a substrate having a transistor and a metallization layer; forming a metal pad in direct contact with the metallization layer of the substrate; forming a passivation layer in direct contact with the metal pad and covering the substrate; forming a routing trace above the passivation layer in direct contact with the metal pad, and the routing trace is substantially larger than the metal pad, and the routing trace is not electrically insulated by a subsequent layer; and forming a bump connected to the metal pad with the routing trace.
1. A method of manufacturing an integrated circuit system comprising:
providing a substrate having a transistor and a metallization layer;
forming a metal pad in direct contact with the metallization layer of the substrate;
forming a passivation layer in direct contact with the metal pad and covering the substrate;
forming a shield layer on the passivation layer;
forming a routing trace above the passivation layer and on the shield layer, the routing trace, the passivation layer, and the shield layer in direct contact with a side of the metal pad facing away from the substrate with the routing trace not electrically insulated by a subsequent layer; and
forming a bump connected to the metal pad with the routing trace.
2. The method as claimed in claim 1 further comprising:
forming a rigid layer thicker than the metal pad between the bump and the passivation layer.
3. The method as claimed in claim 1 wherein:
forming the shield layer includes forming the shield layer on a side of the passivation layer opposite the substrate; and
forming the bump includes forming the bump offset from the metal pad.
4. The method as claimed in claim 1 wherein:
providing the substrate having the transistor includes the transistor on a side of the metallization layer facing away from the metal pad.
5. The method as claimed in claim 1 wherein:
forming the routing trace includes forming the routing trace extended onto portions of the passivation layer over portions of the metal pad.
6. A method of manufacturing an integrated circuit system comprising:
providing a substrate having a transistor and a metallization layer;
forming a metal pad in direct contact with the metallization layer of the substrate;
forming a passivation layer in direct contact with the metal pad and covering the substrate;
processing the passivation layer to expose the metal pad;
forming a shield layer on the passivation layer;
forming a routing trace above the passivation layer and on the shield layer, the routing trace, the passivation layer, and the shield layer in direct contact with a side of the metal pad facing away from the substrate with the routing trace not electrically insulated by a subsequent layer; and
forming a bump having a pedestal portion and a solder portion and the bump is in direct contact with the routing trace.
7. The method as claimed in claim 6 wherein:
forming the bump includes forming the pedestal portion oxidized and is non-wettable to the solder portion.
8. The method as claimed in claim 6 wherein:
forming the bump includes forming the bump having an under bump metallization portion in direct contact with the routing trace.
9. The method as claimed in claim 6 wherein:
forming the bump includes forming the bump with different horizontal dimensions, different placement above the substrate, or a combination there of, than the metal pad.
10. The method as claimed in claim 6 wherein:
forming the bump includes forming the bump not directly over the metal pad.
11. An integrated circuit system comprising:
a substrate having a transistor and a metallization layer;
a metal pad in direct contact with the metallization layer of the substrate;
a passivation layer in direct contact with the metal pad and covering the substrate;
a shield layer on the passivation layer;
a routing trace above the passivation layer and on the shield layer, the routing trace, the passivation layer, and the shield layer in direct contact with a side of the metal pad facing away from the substrate with the routing trace not electrically insulated by a subsequent layer; and
a bump connected to the metal pad with the routing trace.
12. The system as claimed in claim 11 further comprising:
a rigid layer thicker than the metal pad between the bump and the passivation layer.
13. The system as claimed in claim 11 wherein:
the shield layer is between the passivation layer and the routing trace; and
the bump is offset from the metal pad.
14. The system as claimed in claim 11 wherein:
the transistor is on a side of the metallization layer facing away from the metal pad.
15. The system as claimed in claim 11 wherein:
the routing trace extends onto portions of the passivation layer over portions of the metal pad.
16. The system as claimed in claim 11 wherein:
the bump has a pedestal portion and a solder portion; and
the passivation layer has the characteristics of being processed to expose the metal pad.
17. The system as claimed in claim 16 wherein:
the pedestal portion of the bump is oxidized and is non-wettable to the solder portion.
18. The system as claimed in claim 16 wherein:
the bump has an under bump metallization portion in direct contact with the routing trace.
19. The system as claimed in claim 16 wherein:
the bump has different horizontal dimensions, different placement above the substrate, or a combination thereof, than the metal pad.
20. The system as claimed in claim 16 wherein:
the bump is not directly over the metal pad.