Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal

1. A method for chemical mechanical polishing of a substrate, comprising:

providing a substrate, wherein the substrate comprises silicon oxide;

providing a chemical mechanical polishing composition, consisting of, as initial components: water; 5 to 25 wt % of an abrasive, wherein the abrasive is a colloidal silica having an average particle size of 10 to 200 nm; a pH adjusting agent, wherein the pH adjusting agent is selected from the group consisting of an inorganic acid and an inorganic base; and 0.001 to 1 wt % of a substance according to formula I

wherein R 1 , R 2 and R 3 are each independently selected from a C 1-4 alky group; wherein the chemical mechanical polishing composition has a pH of 10- 11 ;

providing a chemical mechanical polishing pad with a polishing surface, wherein the chemical mechanical polishing pad composes a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad;

moving the polishing surface relative to the substrate, wherein at least some of the silicon oxide is removed from the substrate;

dispensing the chemical mechanical polishing composition onto the polishing surface; and,

abrading at least a portion of the substrate to polish the substrate;

wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; wherein the improved polishing defectivity performance is determined with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute a chemical mechanical polishing composition flow rate of 200 ml/mm, a nominal down force of 20.7 kPa on a 200 mm polishing machine such that the following expression is satisfied:

X<X 0

where X is a count of scratch defects on the polished substrate following a post polish hydrogen fluoride wash for the chemical mechanical polishing composition and X 0 is a count of scratch defects obtained under identical conditions except that the substance according to formula I is absent from the chemical mechanical polishing composition.

2. The method of claim 1 , wherein the chemical mechanical polishing composition exhibits a silicon oxide removal rate of >2,000 Å/min; with a platen speed of 93 revolutions per minute, a carrier speed of 87 revolutions per minute, a chemical mechanical polishing composition flow rate of 200 ml/min, a nominal down force of 20.7 kPa on a 200 mm polishing machine; wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

3. The method of claim 2 , wherein at least one of the following equations is satisfied:

((( A−A 0 )/ A 0 )*100)≧5; and  (i)

((( A−A 0 )/ A 0 )*100)≧10,  (ii)

wherein A is the removal rate of silicon oxide, measured in Å/min, using the chemical mechanical polishing composition and A 0 is a removal rate of silicon oxide, measured in Å/min, under identical conditions except that the substance according to formula I is absent.